scholarly journals The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2thin-film pairs

2015 ◽  
Author(s):  
S. Papernov ◽  
A. A. Kozlov ◽  
J. B. Oliver ◽  
C. Smith ◽  
L. Jensen ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Ultraviolet Absorption ◽  
Laser Damage ◽  
Near Ultraviolet

scholarly journals Role of HfO2/SiO2thin-film interfaces in near-ultraviolet absorption and pulsed laser damage

2016 ◽  
Vol 56 (1) ◽  
pp. 011004 ◽  
Author(s):  
Semyon Papernov ◽  
Alexei A. Kozlov ◽  
James B. Oliver ◽  
Chris Smith ◽  
Lars Jensen ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Ultraviolet Absorption ◽  
Laser Damage ◽  
Near Ultraviolet

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

An Infrared Microscope for Use on a Focused Ion Beam for Circuit Edit and Backside Edit Applications

2015 ◽  
Author(s):  
Alexander Richards ◽  
Matthew Weschler ◽  
Michael Durller
Keyword(s):  
Focused Ion Beam ◽  
Near Infrared ◽  
Ion Beam ◽  
Visible Spectrum ◽  
Camera System ◽  
Buried Structures ◽  
Ir Camera ◽  
Area Of Interest ◽  
Near Ultraviolet ◽  
Infrared Microscope

Abstract To help solve the navigational problem, i.e., being able to successfully locate a circuit for probing or editing without destroying chip functionality, a near-infrared (NIR), near-ultraviolet (NUV), and visible spectrum camera system was developed that attaches to most focused ion beam (FIB) or scanning electron microscope vacuum chambers. This paper reviews the details of the design and implementation of the NIR/NUV camera system, as instantiated upon the FEI FIB 200, with a particular focus on its use for the visualization of buried structures, and also for non-destructive real time area of interest location and end point detection. It specifically considers the use of the micro-optical camera system for its benefit in assisting with frontside and backside circuit edit, as well as other typical FIB milling activities. The quality of the image obtained by the IR camera rivals or exceeds traditional optical based imaging microscopy techniques.

Applications of Energy Beams in Material and Device Processing

1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Ion Beams ◽  
Traditional Role ◽  
Near Surface ◽  
Device Processing ◽  
Composition Modification ◽  
Directed Energy ◽  
Transistor Fabrication

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

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