Mitigation of charged impurity effects in graphene field-effect transistors with polar organic molecules (Presentation Recording)

2015 ◽  
Author(s):  
Barrett C. Worley ◽  
Seohee Kim ◽  
Deji Akinwande ◽  
Peter J. Rossky ◽  
Ananth Dodabalapur
Keyword(s):  
Field Effect ◽  
Organic Molecules ◽  
Field Effect Transistors ◽  
Impurity Effects ◽  
Charged Impurity

Dramatic vapor-phase modulation of the characteristics of graphene field-effect transistors

2015 ◽  
Vol 17 (28) ◽  
pp. 18426-18430 ◽  
Author(s):  
Barrett C. Worley ◽  
Seohee Kim ◽  
Saungeun Park ◽  
Peter J. Rossky ◽  
Deji Akinwande ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Vapor Phase ◽  
Phase Modulation ◽  
Field Effect ◽  
Organic Molecules ◽  
Field Effect Transistors

Graphene FETs exposed to vapor-phase, polar, organic molecules exhibit shifts in Dirac voltage, the magnitude of which obviously increase with increasing dipole moment of each type of polar vapor.

Properties of Chemically Modified Carbon Nanotubes

2005 ◽  
Vol 901 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Hirotaka Ohashi ◽  
Takeshi Akasaka ◽  
Yutaka Maeda ◽  
Shinya Takaishi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Organic Molecules ◽  
Field Effect Transistors ◽  
Electric Transport ◽  
Electron Carrier ◽  
Chemically Modified ◽  
Silyl Groups ◽  
Modified Carbon Nanotubes ◽  
P Type

AbstractElectric transport properties of chemically modificated carbon nanotubes (CNTs) using Si-containing organic molecules were investigated by means of the field effect transistors (FETs) technique. From the results of FET measurements, it was shown that p-type semiconducting CNTs can be converted to n-type ones by exohedral silylation. It is suggested that the electron carrier are doped into CNTs from the additional silyl groups, that is, the electronic properties of CNTs can be controlled by chemically modifications of outer surface.

FET Characteristic of Chemically-Modified CNT

2009 ◽  
Vol 1154 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Yan Wang ◽  
Naoya Komatsu ◽  
Katsumi Tanigaki
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
Organic Molecules ◽  
Field Effect Transistors ◽  
Physical Adsorption ◽  
Electric Transport ◽  
Electron Carrier ◽  
Chemically Modified ◽  
Surface Modified ◽  
P Type

AbstractElectric transport properties of chemically modificated carbon nanotubes (CNT) using Si-containing organic molecules and polymers were investigated by means of the field effect transistors (FET) technique. From the results of FET measurements for each chemically surface modified CNT, it was shown that p-type semiconducting CNT can be converted to n-type ones by physical adsorption of Si-containing organic molecules and polymers having Ph-groups. It is suggested that the electron carrier are doped into CNT from the adsorbed molecules and polymers, and it was also confirmed by the results of adsorption spectra. That is, it can be said that the electronic properties of CNT can be controlled by chemically modifications of outer surface.

scholarly journals Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2774 ◽  
Author(s):  
Kevin Kam ◽  
Brianne Tengan ◽  
Cody Hayashi ◽  
Richard Ordonez ◽  
David Garmire
Keyword(s):  
Field Effect ◽  
Organic Molecules ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Liquid ◽  
Sensor Technology ◽  
High Electron ◽  
Graphene Field Effect Transistor ◽  
Graphene Interface ◽  
Improved Performance

We have pioneered the use of liquid polar organic molecules as alternatives to rigid gate-dielectrics for the fabrication of graphene field-effect transistors. The unique high net dipole moment of various polar organic molecules allows for easy manipulation of graphene’s conductivity due to the formation of an electrical double layer with a high-capacitance at the liquid and graphene interface. Here, we compare the performances of dimethyl sulfoxide (DMSO), acetonitrile, propionamide, and valeramide as polar organic liquid dielectrics in graphene field-effect transistors (GFETs). We demonstrate improved performance for a GFET with a liquid dielectric comprised of DMSO with high electron and hole mobilities of 154.0 cm2/Vs and 154.6 cm2/Vs, respectively, and a Dirac voltage <5 V.

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
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