scholarly journals OLEDs: light-emitting thin film thermistors revealing advanced self-heating effects

2015 ◽  
Author(s):  
Axel Fischer ◽  
Thomas Koprucki ◽  
Annegret Glitzky ◽  
Matthias Liero ◽  
Klaus Gärtner ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Emitting ◽  
Self Heating ◽  
Heating Effects

Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

2002 ◽  
Vol 81 (18) ◽  
pp. 3491-3493 ◽  
Author(s):  
A. Chitnis ◽  
J. Sun ◽  
V. Mandavilli ◽  
R. Pachipulusu ◽  
S. Wu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Self Heating ◽  
Heating Effects ◽  
High Pump ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature

1994 ◽  
Vol 04 (C6) ◽  
pp. C6-57-C6-62
Author(s):  
J. Jomaah ◽  
G. Ghibaudo ◽  
F. Balestra
Keyword(s):  
Thin Film ◽  
Self Heating ◽  
Heating Effects

Self-heating effects in polycrystalline silicon thin film transistors

2006 ◽  
Vol 89 (9) ◽  
pp. 093509 ◽  
Author(s):  
Antonio Valletta ◽  
Alessandro Moroni ◽  
Luigi Mariucci ◽  
Alessandra Bonfiglietti ◽  
Guglielmo Fortunato
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Self Heating ◽  
Heating Effects

Micro-Raman Spectroscopy: Self-Heating Effects In Deep UV Light Emitting Diodes

2002 ◽  
Vol 743 ◽  
Author(s):  
A. Sarua ◽  
M. Kuball ◽  
M. J. Uren ◽  
A. Chitnis ◽  
J. P. Zhang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Self Heating ◽  
Micro Raman Spectroscopy ◽  
Heating Effects ◽  
Heat Sinking

ABSTRACTUltraviolet light emitting diodes (LED) based on GaN and its ternary alloy AlGaN are key devices for applications such as solid state white lighting and chemical sensing. Ultraviolet LEDs are prone to self-heating effects, i.e., temperature rises during operation, contributing significantly to the commonly observed saturation of light output power at relatively low input currents. Rather little, however, is known about the actual device temperature of an operating ultraviolet LED. Using micro-Raman spectroscopy temperature measurements were performed as a function of input current on 325nm-Al0.18Ga0.82N/Al0.12Ga0.88N multiple quantum wells LEDs grown on sapphire substrates, flip-chip mounted on SiC for heat-sinking. Temperature maps were recorded over the active device area. Temperature rises of about 65 °C were measured at input currents as low as 50mA (at 8V) for 200 μm x 200 μm size LEDs despite flipchip mounting the devices. Temperature rises at the device edges were found to be higher than in the device center, due to combined heat sinking and current crowding effects. Finite difference heat dissipation simulations were performed and compared to the experimental results.

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