Zero-bias and low-chirp, monolithically integrated 10 Gbit/s DFB laser and electroabsorption modulator on semi-insulating InP substrate

1996 ◽  
Vol 32 (2) ◽  
pp. 120 ◽  
Author(s):  
O. Sahlén ◽  
L. Lundqvist ◽  
S. Funke
Keyword(s):  
Zero Bias ◽  
Electroabsorption Modulator ◽  
Monolithically Integrated ◽  
Inp Substrate ◽  
Dfb Laser

A 10-Gb/s optical transmitter module with a monolithically integrated electroabsorption modulator with a DFB laser

1990 ◽  
Vol 2 (12) ◽  
pp. 896-898 ◽  
Author(s):  
M. Goto ◽  
K. Hironishi ◽  
A. Sugata ◽  
K. Mori ◽  
T. Horimatsu ◽  
...  
Keyword(s):  
Electroabsorption Modulator ◽  
Monolithically Integrated ◽  
Optical Transmitter ◽  
Dfb Laser

DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS AND THEIR APPLICATION IN PHOTONIC INTEGRATED DEVICES

1996 ◽  
Vol 07 (03) ◽  
pp. 409-428
Author(s):  
YI LUO ◽  
WEI WANG
Keyword(s):  
Semiconductor Lasers ◽  
Distributed Feedback ◽  
Device Structure ◽  
Electroabsorption Modulator ◽  
Monolithically Integrated ◽  
Integrated Devices ◽  
Dfb Laser ◽  
Integrated Device ◽  
First Time ◽  
Multi Quantum Well

Distributed feedback (DFB) semiconductor lasers, especially those with gain-coupled (GC) mechanisms, are studied. A GaAlAs/GaAs multi-quantum well GC-DFB laser with a loss grating is fabricated using MBE for the first time. A 1.3 µm InGaAsP/InP DFB laser with a loss grating and one with a gain grating formed by injected carriers are developed by LPE and MOVPE, respectively. GC-DFB lasers monolithically integrated with electroabsorption modulator is studied systematically for the first time. A novel integrated device structure is proposed and fabricated successfully.

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