Spectrum method for laser induced damage in dielectric thin films

2015 ◽  
Author(s):  
Yue Cai ◽  
Meng-lian Zhou ◽  
Zhi-liang Ma ◽  
Li-jun Wang
1973 ◽  
Vol 23 (11) ◽  
pp. 607-609 ◽  
Author(s):  
L. G. DeShazer ◽  
B. E. Newnam ◽  
K. M. Leung

Author(s):  
Andrius Melninkaitis ◽  
Balys Momgaudis ◽  
Robertas Grigutis ◽  
Linas Smalakys ◽  
Nerijus Šiaulys ◽  
...  

2017 ◽  
Vol 4 (1) ◽  
pp. 016403
Author(s):  
Shenjiang Wu ◽  
Junhong Su ◽  
Dangjuan Li ◽  
Junqi Xu ◽  
Satyananda Kar ◽  
...  

2017 ◽  
Vol 636 ◽  
pp. 289-295 ◽  
Author(s):  
Hossein Shahrokhabadi ◽  
Majid Vaezzadeh ◽  
Alireza Bananej ◽  
Mohamad Hadi Maleki

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.


1995 ◽  
Vol 31 (21) ◽  
pp. 1814-1815 ◽  
Author(s):  
A.T. Findikoglu ◽  
D.W. Reagor ◽  
Q.X. Jia ◽  
X.D. Wu

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