Introducing Fourier-domain mobility spectrum analysis (FMSA) to deduce multi-component carrier mobility and density

2015 ◽  
Author(s):  
Boya Cui ◽  
Yang Tang ◽  
M. Grayson
Keyword(s):  
Spectrum Analysis ◽  
Carrier Mobility ◽  
Fourier Domain ◽  
Mobility Spectrum ◽  
Component Carrier

scholarly journals Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2

2021 ◽  
Vol 118 (25) ◽  
pp. 253107
Author(s):  
Jimin Wang ◽  
Alexander Kurzendorfer ◽  
Lin Chen ◽  
Zhiwei Wang ◽  
Yoichi Ando ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Spectrum Analysis ◽  
Three Dimensional ◽  
Mobility Spectrum

Evidence of different conduction channels in bulk ZnO using f-MEMSA Analysis of transport properties

2007 ◽  
Vol 1035 ◽  
Author(s):  
Celine Tavares Chevalier ◽  
J. Rothman ◽  
G. Feuillet
Keyword(s):  
Electrical Properties ◽  
Transport Properties ◽  
Spectrum Analysis ◽  
Bulk Material ◽  
Mobility Spectrum ◽  
Annealing Conditions ◽  
Conductive Channel ◽  
Hall Effect Measurements ◽  
Heteroepitaxial Layers

AbstractThe characterization of transport properties in Zn0 is known to be challenging, particularly due to surface (in the case of bulk) or interface (in the case of heteroepitaxial layers) conduction channels, which puts severe limitations on the interpretation of Hall Effect measurements. In this communication, we report on the study of transport properties of n-type ZnO bulk material using Hall mobility spectrum analysis estimated through the algorithm known as full Maximum Entropy Mobility Spectrum Analysis, f-MEMSA. The electrical properties of bulk Zn0 are measured using a Hall setup for applied magnetic fields µ0H in the range 0T-9T and for temperatures between 50K and 400K. The f-MEMSA analysis highlights the existence of two types of conduction channels in the considered ZnO substrate. We also show that surface conductive channel can be suppressed using appropriate annealing conditions.

High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs

2015 ◽  
Vol 113 ◽  
pp. 109-115
Author(s):  
G.A. Umana-Membreno ◽  
S.-J. Chang ◽  
M. Bawedin ◽  
J. Antoszewski ◽  
S. Cristoloveanu ◽  
...  
Keyword(s):  
High Resolution ◽  
Spectrum Analysis ◽  
Silicon On Insulator ◽  
Mobility Spectrum ◽  
Fully Depleted

Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates

2011 ◽  
Vol 88 (7) ◽  
pp. 1079-1082 ◽  
Author(s):  
G.A. Umana-Membreno ◽  
T.B. Fehlberg ◽  
S. Kolluri ◽  
D.F. Brown ◽  
G. Parish ◽  
...  
Keyword(s):  
Electron Transport ◽  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Sapphire Substrates
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