Resonant-tunneling diode stability and its consequences for high-frequency operation

1990 ◽  
Author(s):  
Curtis Kidner ◽  
Imran Mehdi ◽  
Jack R. East ◽  
George I. Haddad
Keyword(s):  
High Frequency ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
High Frequency Operation

scholarly journals Numerical Modelling of a Graphene - Resonant Tunneling Diode as a High Frequency Oscillator

2019 ◽  
Author(s):  
Shakirudeen Lasisi
Keyword(s):  
High Frequency ◽  
Resonant Tunneling ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Domain Boundary ◽  
Resonant Tunneling Diode ◽  
Total Output ◽  
High Electron ◽  
Tunneling Diode ◽  
Output Synchronization

New solid-state sources of Gigahertz-Terahertz electromagnetic radiation continue to have many applications in high-speed electronics, communications, security, and medicine. To develop new devices, it is important to understand the coupling of such high-frequency sources not only with each other but also with their environment e.g. to achieve increased power output, synchronization, and to control interference. Using Graphene-based materials is particularly promising due to its high electron mobility and configurability of the device structures. However, accurately modelling its electromagnetic behavior computationally along with the inherent complexities of the device itself (e.g. non-linearities, and quantum effects) can be quite challenging using current tools. To address this, we use a simplified approximate model to reduce the complexity of the structure and derive new formulations that describe its electromagnetic and intrinsic behaviours. In this poster, we report new formulations, finite element spaces and general progress in modelling a graphene hexagonal-boron-nitride resonant tunneling diode (GRTD) using the time-domain boundary element method. We also explore the possibility of mutual coupling and synchronization between two GRTD devices as well as their radiation patterns and total output power.

scholarly journals Terahertz Emitter Using Resonant-Tunneling Diode and Applications

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1384
Author(s):  
Masahiro Asada ◽  
Safumi Suzuki
Keyword(s):  
Output Power ◽  
High Frequency ◽  
Resonant Tunneling ◽  
Large Scale ◽  
Frequency Tuning ◽  
Resonant Tunneling Diode ◽  
High Output Power ◽  
Tunneling Diode ◽  
Spectral Narrowing ◽  
High Output

A compact source is important for various applications utilizing terahertz (THz) waves. In this paper, the recent progress in resonant-tunneling diode (RTD) THz oscillators, which are compact semiconductor THz sources, is reviewed, including principles and characteristics of oscillation, studies addressing high-frequency and high output power, a structure which can easily be fabricated, frequency tuning, spectral narrowing, different polarizations, and select applications. At present, fundamental oscillation up to 1.98 THz and output power of 0.7 mW at 1 THz by a large-scale array have been reported. For high-frequency and high output power, structures integrated with cylindrical and rectangular cavities have been proposed. Using oscillators integrated with varactor diodes and their arrays, wide electrical tuning of 400–900 GHz has been demonstrated. For spectral narrowing, a line width as narrow as 1 Hz has been obtained, through use of a phase-locked loop system with a frequency-tunable oscillator. Basic research for various applications—including imaging, spectroscopy, high-capacity wireless communication, and radar systems—of RTD oscillators has been carried out. Some recent results relating to these applications are discussed.

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