Metallic metasurface as a directional and monochromatic thermal emitter

Author(s):  
Francois Marquier ◽  
Daniele Costantini ◽  
Anthony Lefebvre ◽  
Anne-Lise Coutrot ◽  
Ioana Moldovan-Doyen ◽  
...  
Keyword(s):  
Author(s):  
P. E. Batson

In recent years,instrumentation for electron energy loss spectroscopy (EELS) has been steadily improved to increase energy resolution and collection efficiency. At present 0.40eV at 10mR collection half angle is available with commercial magnetic sectors (e.g. Gatan, Inc. and VG Microscopes, Ltd.), and 70meV at 10mR has been demonstrated by use of a Wien filter within a large deceleration field. When these high resolution spectrometers are coupled to the modern small electron probe instrument, we obtain a tool which promises to reveal local changes in bandstructure and bonding near defects and interfaces in heterogeneous materials.Unfortunately, typical electron sources have intrinsic energy widths which limit attainable spectroscopic resolution in the absence of some monochromation system. For instance, the W thermal emitter has a half width of about 1eV.


2021 ◽  
Vol 11 (4) ◽  
pp. 1544
Author(s):  
Meguya Ryu ◽  
Yoshiaki Nishijima ◽  
Shinya Morimoto ◽  
Naoki To ◽  
Tomoki Hashizume ◽  
...  

The four polarisation method is adopted for measurement of molecular orientation in dielectric nanolayers of metal-insulator-metal (MIM) metamaterials composed of gold nanodisks on polyimide and gold films. Hyperspectral mapping at the chemical finger printing spectral range of 4–20 μμm was carried out for MIM patterns of 1–2.5 μμm period (sub-wavelength). Overlay images taken at 0,π4,π2,3π4 orientation angles and subsequent baseline compensation are shown to be critically important for the interpretation of chemical mapping results and reduction of spurious artefacts. Light field enhancement in the 60-nm-thick polyimide (I in MIM) was responsible for strong absorption at the characteristic polyimide bands. Strong absorbance A at narrow IR bands can be used as a thermal emitter (emittance E=1−R), where R is the reflectance and A=1−R−T, where for optically thick samples the transmittance is T=0.


ACS Photonics ◽  
2017 ◽  
Vol 4 (6) ◽  
pp. 1371-1380 ◽  
Author(s):  
Alexander Lochbaum ◽  
Yuriy Fedoryshyn ◽  
Alexander Dorodnyy ◽  
Ueli Koch ◽  
Christian Hafner ◽  
...  

2018 ◽  
Vol 124 (23) ◽  
pp. 233101 ◽  
Author(s):  
S. Sharifi ◽  
Y. M. Banadaki ◽  
V. F. Nezhad ◽  
G. Veronis ◽  
J. P. Dowling

2021 ◽  
Author(s):  
Yuanlin Jia ◽  
Xiaoxia Wang ◽  
Huaiyuan Yin ◽  
Huawei Yao ◽  
junqiao Wang ◽  
...  

2017 ◽  
Vol 110 (18) ◽  
pp. 181109 ◽  
Author(s):  
Dongyeon Daniel Kang ◽  
Takuya Inoue ◽  
Takashi Asano ◽  
Susumu Noda

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1814
Author(s):  
Guozhi Hou ◽  
Qingyuan Wang ◽  
Yu Zhu ◽  
Zhangbo Lu ◽  
Jun Xu ◽  
...  

Thermal emitters with properties of wavelength-selective and narrowband have been highly sought after for a variety of potential applications due to their high energy efficiency in the mid-infrared spectral range. In this study, we theoretically and experimentally demonstrate the tunable narrowband thermal emitter based on fully planar Si-W-SiN/SiNO multilayer, which is realized by the excitation of Tamm plasmon polaritons between a W layer and a SiN/SiNO-distributed Bragg reflector. In conjunction with electromagnetic simulations by the FDTD method, the optimum structure design of the emitter is implemented by 2.5 periods of DBR structure, and the corresponding emitter exhibits the nearly perfect narrowband absorption performance at the resonance wavelength and suppressed absorption performance in long wave range. Additionally, the narrowband absorption peak is insensitive to polarization mode and has a considerable angular tolerance of incident light. Furthermore, the actual high-quality Si-W-SiN/SiNO emitters are fabricated through lithography-free methods including magnetron sputtering and PECVD technology. The experimental absorption spectra of optimized emitters are found to be in good agreement with the simulated absorption spectra, showing the tunable narrowband absorption with all peak values of over 95%. Remarkably, the fabricated Si-W-SiN/SiNO emitter presents excellent high-temperature stability for several heating/cooling cycles confirmed up to 1200 K in Ar ambient. This easy-to-fabricate and tunable narrowband refractory emitter paves the way for practical designs in various photonic and thermal applications, such as thermophotovoltaic and IR radiative heaters.


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