Demonstration of a mid-wavelength infrared narrowband thermal emitter based on GaN/AlGaN quantum wells and a photonic crystal

2017 ◽  
Vol 110 (18) ◽  
pp. 181109 ◽  
Author(s):  
Dongyeon Daniel Kang ◽  
Takuya Inoue ◽  
Takashi Asano ◽  
Susumu Noda
Keyword(s):  
Photonic Crystal ◽  
Quantum Wells ◽  
Thermal Emitter

scholarly journals Excitonic nonlinear shifts in photonic crystal nanocavities with buried multiple quantum wells

2021 ◽  
Vol 118 (11) ◽  
pp. 111101
Author(s):  
Masato Takiguchi ◽  
Kengo Nozaki ◽  
Hisashi Sumikura ◽  
Naotomo Takemura ◽  
Takuro Fujii ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

OPTICAL GAIN AND ENERGY BAND STRUCTURE OF PHOTONIC CRYSTAL VCSELs WITH HIGH-INDEX-CONTRAST SUBWAVELENGTH GRATINGS

2014 ◽  
Vol 02 (02) ◽  
pp. 1440014
Author(s):  
J. CHEN ◽  
W. J. FAN ◽  
Q. J. WANG ◽  
MARCIN GEBSKI ◽  
MACIEJ DEMS ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Quantum Wells ◽  
Optical Gain ◽  
High Index ◽  
Cavity Surface ◽  
Subwavelength Gratings ◽  
Vertical Cavity Surface ◽  
Index Contrast ◽  
High Index Contrast ◽  
Valence Bands

Photonic crystal vertical-cavity surface-emitting laser structure with incorporation of high-index-contrast subwavelength gratings is fabricated and the three quantum well active region of the structure is investigated with 8 band k.p model. The dispersion of energy sub-bands and wave functions in the conduction bands and valence bands indicate that effective overlapping and interactions between electrons and holes can be realized in the quantum wells and that the maximum spontaneous emission rate and optical gain occurs at the expected wavelength, which is confirmed by the measured photoluminescence spectrum.

Optical properties of GaN Photonic Crystal Membrane Nanocavities at Blue Wavelengths

2005 ◽  
Vol 892 ◽  
Author(s):  
Yong-Seok Choi ◽  
Cedrik Meier ◽  
Rajat Sharma ◽  
Kevin Hennessy ◽  
Elaine D. Haberer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Photonic Crystal ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Light Extraction ◽  
Design Parameters ◽  
Multiple Quantum ◽  
Membrane Structures ◽  
High Q ◽  
Q Factors

AbstractWe have investigated the design parameters for high-Q photonic-crystal (PC) bandgap modes in the emission wavelengths of InGaN/GaN multiple quantum wells. We demonstrate experimental schemes to realize 2D triangular-lattice PC membrane structures, which is essential to obtain photonic bandgap (PBG) modes, and the optical properties of L7 membrane nanocavities that consist of seven missing holes in the Γ-K direction. L7 cavities show pronounced resonances with Q factors of 300 to 800 in the PBG as well as the enhancement of light extraction of the broad InGaN/GaN multiple-quantum-well emission by the 2D PBG.

scholarly journals Silicon photonic crystal thermal emitter at near-infrared wavelengths

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Bryan J. O’Regan ◽  
Yue Wang ◽  
Thomas F. Krauss
Keyword(s):  
Photonic Crystal ◽  
Near Infrared ◽  
Silicon Photonic ◽  
Thermal Emitter ◽  
Infrared Wavelengths

scholarly journals Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate

Photonics ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 32 ◽  
Author(s):  
Zong-Lin Li ◽  
Yuan-Chi Kang ◽  
Gray Lin ◽  
Chien-Ping Lee
Keyword(s):  
Photonic Crystal ◽  
Quantum Wells ◽  
Crystal Surface ◽  
Cavity Resonance ◽  
Etch Depth ◽  
Wavelength Shift ◽  
Lattice Period ◽  
Lasing Wavelength ◽  
Surface Emitting Lasers ◽  
Emitting Lasers

InP-based InGaAs/GaAsSb ‘W’-type quantum well (QW) photonic-crystal (PC) surface- emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance.

Ga(In)N Photonic Crystal Light Emitters with Semipolar Quantum Wells

2013 ◽  
Vol 52 (6R) ◽  
pp. 062101 ◽  
Author(s):  
Dominik Heinz ◽  
Robert Anton Richard Leute ◽  
Seda Kizir ◽  
Yijia Li ◽  
Tobias Meisch ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Quantum Wells ◽  
Light Emitters

scholarly journals λ-Scale Embedded Active Region Photonic Crystal (LEAP) Lasers for Optical Interconnects

Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 82 ◽  
Author(s):  
Shinji Matsuo ◽  
Koji Takeda
Keyword(s):  
Photonic Crystal ◽  
Active Region ◽  
Power Consumption ◽  
Quantum Wells ◽  
Output Power ◽  
Optical Interconnects ◽  
Low Cost ◽  
Threshold Current ◽  
Active Volume ◽  
Wavelength Scale

The distances optical interconnects must cover are decreasing as Internet traffic continues to increase. Since short-reach interconnect applications require many transmitters, cost and power consumption are significant issues. Directly modulated lasers with a wavelength-scale active volume will be used as optical interconnects on boards and chips in the future because a small active volume is expected to reduce power consumption. We developed electrically driven photonic crystal (PhC) lasers with a wavelength-scale cavity in which the active region is embedded in a line-defect waveguide of an InP-based PhC slab. We call this a λ-scale embedded active region PhC laser, or a LEAP laser. The device, whose active region has six quantum wells with 2.5 × 0.3 × 0.15 μm3 active volume, exhibits a threshold current of 28 μA and provides 10 fJ/bit of operating energy to 25 Gbit/s NRZ (non-return-to-zero) signals. The fiber-coupled output power is 6.9 μW. We also demonstrate heterogeneous integration of LEAP lasers on a SiO2/Si substrate for low-cost photonic integrated circuits (PICs). The threshold current is 40.5 μA and the output power is 4.4 μW with a bias current of 200 μA. These results indicate the feasibility of using PhC lasers in very-short-distance optical communications.

The Resonant Modes in One-Dimensional Photonic Crystal Parallel Quantum Wells Composed of Negative Index Materials

2013 ◽  
Vol 401-403 ◽  
pp. 748-753
Author(s):  
Xu Yang Xiao ◽  
Run Ping Chen ◽  
Zheng Fu Cheng
Keyword(s):  
Photonic Crystal ◽  
Dispersion Relation ◽  
Quantum Wells ◽  
Incident Angle ◽  
One Dimensional ◽  
Dimensional Photonic Crystal ◽  
Resonant Modes ◽  
The One ◽  
Scattering Matrix Method ◽  
Photonic Band

We propose the one-dimensional photonic crystal quantum well structure composed of two negative metamaterials, the features of which are investigated with scattering matrix method. With this method, the transmittance, reflectance and dispersion relation of electromagnetic wave propagation in photonic crystal are obtained. Moreover, the photonic band structure is given by dispersion relation. For photonic crystal parallel wells the sandwich structure (MpNqMp) and four PCs structure (MpNqMpNq), the resonant modes exist in the photonic band gaps. The number of resonant modes is varied by changing the period number of the constituent photonic crystals. Meanwhile, the resonant modes is not sensitive to the incident angle increasing, only shift slowly to lower frequency region. Moreover, the resonant modes can be act as multiple ultra-narrow bandwidth filters.

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