Role of point defect diffusion and recombination in low-temperature growth of semiconductor heterostructures using low-energy ion beams

1990 ◽  
Author(s):  
Olivier Vancauwenberghe ◽  
Nicole Herbots ◽  
Olof C. Hellman
Keyword(s):  
Low Temperature ◽  
Point Defect ◽  
Ion Beams ◽  
Low Energy ◽  
Semiconductor Heterostructures ◽  
Temperature Growth ◽  
Defect Diffusion ◽  
Low Temperature Growth

Possibility of Low Temperature Growth of YBCO Thin Film by Low Energy Ion Assisted Deposition

1993 ◽  
pp. 1001-1004
Author(s):  
Masao Noma ◽  
Masami Nakasone ◽  
Soichi Ogawa ◽  
Tsutom Yotsuya ◽  
Yoshihiko Suzuki
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Energy ◽  
Ybco Thin Film ◽  
Temperature Growth ◽  
Low Temperature Growth

Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from SiH4/H2Mixture

2009 ◽  
Vol 11 (3) ◽  
pp. 297-301 ◽  
Author(s):  
Chen Chengzhao ◽  
Qiu Shenghua ◽  
Liu Cuiqin ◽  
Wu Yandan ◽  
Li Ping ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Hydrogen Dilution

The Role of Atomic Hydrogen and Oxygen in Low Temperature Growth of Diamond by Microwave Plasma Assisted Cvd

1992 ◽  
Vol 270 ◽  
Author(s):  
Y. Muranaka ◽  
H. Yamashita ◽  
H. Miyadera
Keyword(s):  
Low Temperature ◽  
Atomic Hydrogen ◽  
Microwave Plasma ◽  
Natural Diamond ◽  
Diamond Films ◽  
Microwave Plasmas ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Good Crystallinity

ABSTRACTDiamond films grown in the microwave plasmas of CO(7–8%)-O2(0–2.2%)-H2 systems in the range of 130–750°C were characterized by scanning electron microscopy, Raman spectroscopy, and cathodoluminescence (CL) studies. The films grown in the CO-O2-H2 system had much better crystallinity than those grown in the CO-H2 system. This was because oxygen extremely purified diamond films by suppressing polyacetylene inclusion, and prohibited the vacancy formation in the crystallites. These oxygen functions have indicated the possibility that high quality diamond films (FWI-tM of the diamond Raman peak =4.0–4. lcm−1) close to natural diamond (FWHM=3.0cm−1) were obtained in the CO(8%)-O2(2.2%)-H2 system between 400 and 750°C. Though crystallinity deterioration occurred at 130°C, the obtained film (FWHM=10.2cm−1) in the CO(8%)-O2(2.2%)-H 2 system was of good crystallinity comparable to those (FWHM=7–21cm−1) grown by conventional CVD processes and gas systems between 590 and 1327°C. The CO-O2-H2 microwave plasma was concluded to be one of the best environment for the low temperature growth of highly purified diamond films of good crystallinity.

Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 900-902 ◽  
Author(s):  
Jinzo Watanabe ◽  
Yasuaki Kawai ◽  
Nobuhiro Konishi ◽  
Tadahiro Ohmi
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Gate Oxide ◽  
Low Energy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
High Integrity ◽  
Thin Gate Oxide

Role of the oxygen atomic beam in low‐temperature growth of superconducting films by laser deposition

1989 ◽  
Vol 54 (10) ◽  
pp. 954-956 ◽  
Author(s):  
J. P. Zheng ◽  
Q. Y. Ying ◽  
S. Witanachchi ◽  
Z. Q. Huang ◽  
D. T. Shaw ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Beam ◽  
Superconducting Films ◽  
Laser Deposition ◽  
Temperature Growth ◽  
Low Temperature Growth
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