A study of the non-uniform current density influence in reactive sputtering deposition

2014 ◽  
Author(s):  
Tao Wang ◽  
He Yu ◽  
Chao Chen ◽  
Yang Wang ◽  
Yadong Jiang
Keyword(s):  
Current Density ◽  
Reactive Sputtering ◽  
Sputtering Deposition ◽  
Uniform Current

Basic properties of anodized porous silicon formed under uniform current density

1994 ◽  
Vol 77 (4) ◽  
pp. 97-105
Author(s):  
Hidekazu Aoyagi ◽  
Akira Motohashi ◽  
Akira Kinoshita ◽  
Tomoyoshi Aono ◽  
Akinobu Satoh
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Basic Properties ◽  
Uniform Current

Preparation of TiO x /γ-Al 2 O 3 Catalyst on Powdery γ-Al 2 O 3 by Using Reactive Sputtering Deposition

1999 ◽  
Vol 16 (6) ◽  
pp. 426-427
Author(s):  
Wen-qi Lu ◽  
Zhen-feng Xu ◽  
Xin-lu Deng ◽  
Jun Xu ◽  
Jia-liang Zhang ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Sputtering Deposition

Reactive sputtering deposition of plasma polymerized nylon films with embedded NHx groups

2019 ◽  
Vol 363 ◽  
pp. 120-127 ◽  
Author(s):  
Vadym Prysiazhnyi ◽  
Jiří Kratochvíl ◽  
Ondřej Kylián ◽  
Vitezslav Stranak
Keyword(s):  
Reactive Sputtering ◽  
Sputtering Deposition

scholarly journals Reactive sputtering deposition of SiO2 thin films

2008 ◽  
Vol 73 (1) ◽  
pp. 121-126
Author(s):  
Ivan Radovic ◽  
Yves Serruys ◽  
Yves Limoge ◽  
Natasa Bibic
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reactive Sputtering ◽  
Beam Current ◽  
Sputtering Deposition ◽  
Gas Cylinder ◽  
High Purity Silicon

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5?10-6-2?10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1?10-3 mbar. The substrate temperature was held at 550?C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550?C, an oxygen partial pressure of 2?10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6?10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

Modelling the two-phase flow and current distribution along a vertical gas-evolving electrode

2001 ◽  
Vol 428 ◽  
pp. 249-272 ◽  
Author(s):  
ANDERS A. DAHLKILD
Keyword(s):  
Density Distribution ◽  
Current Density ◽  
Molecular Diffusion ◽  
Two Phase Flow ◽  
Current Density Distribution ◽  
Ionic Species ◽  
Phase Flow ◽  
Two Phase ◽  
Uniform Current ◽  
Experimental Findings

The bubbly two-phase flow and electric current density distribution along a single, vertical, gas-evolving electrode are modelled and the results of a boundary layer analysis are presented. Existing empirical models for particle transport in sheared and sedimenting suspensions are adopted for the bubble mixture to close the two-phase model. Ionic species concentrations are shown to be essentially homogeneous as the mixing effect of the bubble suspension usually is much larger than dispersion by molecular diffusion even at laminar flow conditions. The non-uniformity of the bubble distribution along the electrode results in a non-uniform current density distribution, which agrees well with existing experimental findings in the literature.

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