Investigation of a DNA nucleobase as a gate dielectric for potential application in a graphene-based field effect transistor

2014 ◽  
Author(s):  
Adrienne D. Williams ◽  
Fahima Ouchen ◽  
Steve Kim ◽  
Yen H. Ngo ◽  
Said Elhamri ◽  
...  
Keyword(s):  
Potential Application ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Effect Transistor

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Nano Research ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 3421-3429 ◽  
Author(s):  
Nguyen Minh Triet ◽  
Tran Quang Trung ◽  
Nguyen Thi Dieu Hien ◽  
Saqib Siddiqui ◽  
Do-Il Kim ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Effect Transistor

Dielectric-Tuned Diamondlike Carbon Materials for an Ultrahigh-Speed Self-Aligned Graphene Channel Field Effect Transistor

2012 ◽  
Vol 77 ◽  
pp. 270-275
Author(s):  
Susumu Takabayashi ◽  
Meng Yang ◽  
Shuichi Ogawa ◽  
Yuji Takakuwa ◽  
Tetsuya Suemitsu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Hole Doping ◽  
Plasma Damage ◽  
Dlc Film ◽  
Positive Shift ◽  
Diamondlike Carbon ◽  
Effect Transistor

The ‘DLC-GFET’, a graphene-channel field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film, is presented. The DLC film was formed ‘directly’ onto the graphene channel without forming passivation interlayers using our photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by significant photoemission from the sample with quite low electric power, minimizing plasma damage to the channel. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick DLC gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to improve the high-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from an oxygen species like H2O in the DLC film into the graphene channel, suggesting that a modulation-doped DLC structure with a δ-doped oxygen (nitrogen) species for the p (n) mode will overcome high access resistance.

Self-Induced Gate Dielectric for Graphene Field-Effect Transistor

2013 ◽  
Vol 5 (14) ◽  
pp. 6443-6446 ◽  
Author(s):  
Kaliannan Thiyagarajan ◽  
Balasubramaniam Saravanakumar ◽  
Rajneesh Mohan ◽  
Sang-Jae Kim
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor
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