High-performance SWIR HgCdTe FPA development on silicon substrates

2014 ◽  
Author(s):  
R. Bommena ◽  
J. D. Bergeson ◽  
R. Kodama ◽  
J. Zhao ◽  
S. Ketharanathan ◽  
...  
Keyword(s):  
High Performance ◽  
Silicon Substrates

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

CHARACTERIZATION OF CARBON NITRIDE NANOPARTICLES PREPARED BY LASER ABLATION IN LIQUID FOR OPTOELECTRONIC APPLICATION

2015 ◽  
Vol 22 (04) ◽  
pp. 1550055 ◽  
Author(s):  
KHAWLA S. KHASHAN ◽  
MAYYADAH H. MOHSIN
Keyword(s):  
Laser Ablation ◽  
High Performance ◽  
Carbon Nitride ◽  
High Efficiency ◽  
Silicon Substrates ◽  
Laser Ablation In Liquid ◽  
Optoelectronic Application ◽  
Transmission Electron ◽  
Stretching Vibration ◽  
Size And Morphology

In this work, carbon nitride ( C 3 N 4) nanoparticles (NPs) were synthesized by pulse laser ablation of graphite in ammonium solution, and deposited on silicon substrates by spray. Fourier transform infrared spectroscopy (FTIR), UV-visible spectrophotometer and transmission electron microscopy (TEM) were used to study bonding, absorption, size and morphology of the produce NPs. The FTIR absorption peaks at 2121.6, 1631.7 and 1384 cm-1 stretching vibration bond, it is inferred for the C ≡ N , C = N and C – N , respectively. Bonds suggests the formation, C 3 N 4 NPs. UV absorption peaks coincide with the electronic transitions corresponding to the formation, C 3 N 4 NPs with 3.98 eV optical bandgap. The TEM show the aggregation of the C 3 N 4 NPs with size ranges from 4 to 83 nm, and also the leaf-like structure are shown in the structure of C 3 N 4 suspension. High performance rectifying C 3 N 4/ Si heterojunction with a rectifying ratio exceeding 345 at V = 5 V was obtained, with high photoresponsivity of 2.33 A/W at 600 nm.The results show that C 3 N 4 NPs on silicon substrates will act as very good candidates for making high efficiency photodiodes.

Vertically aligned graphene nanosheets on silicon using an ionic liquid electrolyte: towards high performance on-chip micro-supercapacitors

2015 ◽  
Vol 3 (38) ◽  
pp. 19254-19262 ◽  
Author(s):  
David Aradilla ◽  
Marc Delaunay ◽  
Saïd Sadki ◽  
Jean-Michel Gérard ◽  
Gérard Bidan
Keyword(s):  
High Performance ◽  
Electron Cyclotron Resonance ◽  
Graphene Nanosheets ◽  
Chemical Vapor ◽  
Liquid Electrolyte ◽  
Silicon Substrates ◽  
Ionic Liquid Electrolyte ◽  
Vertically Aligned ◽  
On Chip ◽  
Resonance Plasma

Vertically oriented graphene nanosheets were synthesized by an alternative and simple approach based on electron cyclotron resonance-plasma enhanced chemical vapor deposition (ECR-CVD) onto highly doped silicon substrates.

Adhesion of Cyclotene™ (BCB) Coatings on Silicon Substrates

1993 ◽  
Vol 323 ◽  
Author(s):  
P. H. Townsend ◽  
D. Schmidt ◽  
T. M. Stokich ◽  
S. Kisting ◽  
D. C. Burdeaux ◽  
...  
Keyword(s):  
High Performance ◽  
Chemical Exposure ◽  
Coupling Agents ◽  
Silicon Substrates ◽  
Silane Coupling Agents ◽  
Test Vehicle ◽  
Silane Coupling ◽  
High Bond ◽  
Bond Strengths ◽  
Adhesive Performance

AbstractThis work examines the adhesion of coatings derived from divinylsiloxane bisbenzocyclobutene, mixed stereo and positional isomers of 1,3-bis(2-bicyclo[4.2.0]octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane (CAS 117732–87–3), on oxidized silicon substrates treated with silane coupling agents.This material, commercially available as Cyclotene™ 3022, can be used in the construction of high performance electronic circuits, such as multichip modules. Silane coupling agents examined in this study were 3-aminopropyltriethoxysilane (CAS 01760-24-3)(APTES)(, vinyltriethoxysilane (CAS 00078–08–0)(VTES), and 3-methacryloxypropyl trimethoxysilane (CAS 02530–85–0) (MOP-TMS).Measurement of the interfacial adhesion was performed using microindentation. Bond strengths obtained by this method exceed 200 MPa for the most effective coupling agents. However, these high bond strengths were not found to correlate with acceptable adhesive performance in all cases. In addition to the choice and preparation of the coupling agent, process related chemical exposure has been found to be a key element in the observed adhesive performance. The effect of the cure schedule for the thermoset coating has also been found to be a controlling factor. A short cycle test vehicle was developed consisting of a single 20 gIm polymer layer etched with anisotropic sidewalls. This test vehicle was used to evaluate the efficacy of the coupling agents during process exposures and subsequent thermal shock testing. A solution of MOP-TMS pre-hydrolyzed in methanol was found to produce the most reliable interface with high bond strength.

High-performance long-wavelength HgCdTe infrared detectors grownon silicon substrates

2004 ◽  
Vol 85 (11) ◽  
pp. 2113-2115 ◽  
Author(s):  
D. J. Hall ◽  
L. Buckle ◽  
N. T. Gordon ◽  
J. Giess ◽  
J. E. Hails ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
High Performance ◽  
Silicon Substrates ◽  
Long Wavelength
Sign in / Sign up

Export Citation Format

Share Document