Silicon photonic Bragg-grating couplers for optical communications

2014 ◽  
Author(s):  
Wei Shi ◽  
Venkat Veerasubramanian ◽  
David V. Plant ◽  
Nicolas A. F. Jaeger ◽  
Lukas Chrostowski
Keyword(s):  
Optical Communications ◽  
Bragg Grating ◽  
Grating Couplers ◽  
Silicon Photonic

High-Efficiency Silicon Photonic Modulator Using Coupled Bragg Grating Resonators

2019 ◽  
Vol 37 (9) ◽  
pp. 2065-2075 ◽  
Author(s):  
Omid Jafari ◽  
Hassan Sepehrian ◽  
Wei Shi ◽  
Sophie LaRochelle
Keyword(s):  
High Efficiency ◽  
Bragg Grating ◽  
Silicon Photonic

Silicon photonic wire Bragg grating for on-chip wavelength (de)multiplexing employing ring resonators

2011 ◽  
Author(s):  
P. Muellner ◽  
R. Bruck ◽  
M. Karl ◽  
M. Baus ◽  
T. Wahlbrink ◽  
...  
Keyword(s):  
Ring Resonators ◽  
Bragg Grating ◽  
Silicon Photonic ◽  
On Chip ◽  
Photonic Wire

Silicon Photonic Multi-Rate DCO-CFP2 Interface for DCI, Metro, and Long-Haul Optical Communications

2018 ◽  
Author(s):  
Y. Loussouarn ◽  
E. Pincemin ◽  
Y. Pan ◽  
G. Miller ◽  
A. Gibbemeyer ◽  
...  
Keyword(s):  
Optical Communications ◽  
Silicon Photonic

scholarly journals Nanofabrication of SOI-Based Photonic Waveguide Resonators for Gravimetric Molecule Detection

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 1055
Author(s):  
Tony Granz ◽  
Julia Sophie Böke ◽  
Gerry Hamdana ◽  
Michael Martens ◽  
Arijit Misra ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Brillouin Scattering ◽  
Silicon On Insulator ◽  
Grating Couplers ◽  
Inductively Coupled ◽  
Waveguide Width ◽  
Silicon Photonic ◽  
Wet Chemical ◽  
Peripheral Areas ◽  
Current Area

A silicon photonic microresonator comprising two curved vertical grating couplers and a single suspended Si nanowaveguide (NWG) is developed to investigate the giant enhanced Brillouin scattering in subwavelength NWGs caused by photon-phonon interaction. Finite element modelling based on COMSOL Multiphysics is conducted to optimize the critical device parameters (e.g., waveguide width, height, and length). As the smallest structures that need to be resolved are down to ~15 nm in size, electron-beam nanolithography is employed. In this case, dosage tests are carried out to minimize proximity charging effects during the nanopatterning of the silicon-on-insulator (SOI) surface, resulting in appropriate adaptive current area dosage distributions for the periodic gratings, couplers peripheral areas, and NWG, respectively. Furthermore, an enhanced inductively coupled plasma dry reactive ion etching (ICP-DRIE) process at a cryogenic temperature is used to realize smooth vertical sidewalls. Finally, buffered hydrofluoric acid (BHF)-based wet chemical etching is carried out to remove the buried oxide resulting in a suspended Si waveguide.

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