scholarly journals The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy

2014 ◽  
Author(s):  
Tien Khee Ng ◽  
Anwar Gasim ◽  
Dongkyu Cha ◽  
Bilal Janjua ◽  
Yang Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Gan Nanowire

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

p‐type CdSe grown by molecular beam epitaxy using a nitrogen plasma source

1994 ◽  
Vol 65 (4) ◽  
pp. 466-468 ◽  
Author(s):  
Takeo Ohtsuka ◽  
Junji Kawamata ◽  
Ziqiang Zhu ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
P Type

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3355-3359 ◽  
Author(s):  
Wei Guo ◽  
Meng Zhang ◽  
Animesh Banerjee ◽  
Pallab Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Catalyst Free ◽  
Gan Nanowire

The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

1996 ◽  
Vol 449 ◽  
Author(s):  
S. L. Buczkowski ◽  
Zhonghai Yu ◽  
M. Richards-Babb ◽  
N. C. Giles ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nucleation And Growth ◽  
Rf Plasma ◽  
Molecular Beam Epitaxy Growth ◽  
Dramatic Effect ◽  
Inversion Domain

ABSTRACTNucleation and growth of GaN under Ga-rich conditions by molecular beam epitaxy using a nitrogen rf plasma source is shown to result in both a smoother GaN surface and a reduced inversion domain content. In addition, preliminary results of the dramatic effect of atomic hydrogen on growth kinetics for Ga-rich growth are presented.

Epitaxial Growth of A1N by Plasma Source Molecular Beam Epitaxy

1995 ◽  
pp. 329-334 ◽  
Author(s):  
G. W. Auner ◽  
T. D. Lenane ◽  
F. Ahmad ◽  
R. Naik ◽  
P. K. Kuo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Plasma Source

A New Oxygen Plasma Source for In-Situ Thin Films Growth of DY1BA2CU3O7-x by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
M. Touzeau ◽  
A. Schuhl ◽  
R. Cabanel ◽  
P. Luzeau ◽  
A. Barski ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Atomic Oxygen ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
High Temperature Superconductors ◽  
Plasma Source ◽  
Plasma Discharge

AbstractWe describe an atomic oxygen source based on a D.C. plasma discharge, compatible with cristal growth in a Molecular Beam Epitaxy(M.B.E.) system. The physical characteristics of the oxygen cell are presented. The efficiency of the cell has been proved by direct deposition of CuO at high temperature(500°C). Moreover, we used successfully this cell for direct epitaxial growth of high temperature superconductors, with an ambient pressure as low as 2 10-5 Torr.

Molecular beam epitaxy of p-type ZnSSe using a nitric oxide plasma source

1997 ◽  
Vol 15 (4) ◽  
pp. 2426-2427
Author(s):  
P. Uusimaa ◽  
K. Rakennus ◽  
A. Salokatve ◽  
M. Pessa ◽  
J. Likonen
Keyword(s):  
Nitric Oxide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
P Type

Temperature dependence of transport properties of InN films

2005 ◽  
Vol 892 ◽  
Author(s):  
J.S. Thakur ◽  
R. Naik ◽  
Vaman M Naik ◽  
D. Haddad ◽  
G.W. Auner ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Electron Scattering ◽  
Carrier Density ◽  
Molecular Beam ◽  
Plasma Source ◽  
Large Temperature ◽  
Independent Mobility ◽  
Donor Acceptor ◽  
High Carrier

AbstractThe temperature dependence of Hall mobility, µ, and carrier density, Ne, for thin InN films grown by Molecular Beam Epitaxy and Plasma Source Molecular Beam Epitaxy have been investigated. For temperature up to 300 K, a large temperature-independent Ne is observed in films grown by the above two techniques. However, for higher temperatures, carrier density (Ne) increases with temperature. The characteristic behavior of the mobility for the films with low carrier density is different from that of the high carrier density film, particularly at low temperatures. The low carrier density film shows a peak ∼250 K in mobility as a function of temperature which is contrast to the temperature independent mobility observed for the high density film for T < 300 K. We have investigated theoretically the effect of concentration of donor, acceptor, and threading dislocations on the carrier mobility in these films. Various electron-scattering mechanisms for the mobility in these films have been discussed.

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