β-Ga2O3and single-crystal phosphors for high-brightness white LEDs and LDs, and β-Ga2O3potential for next generation of power devices

2014 ◽  
Author(s):  
Encarnación G. Víllora ◽  
Stelian Arjoca ◽  
Kiyoshi Shimamura ◽  
Daisuke Inomata ◽  
Kazuo Aoki
Keyword(s):  
Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
High Brightness ◽  
White Leds

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Single-crystal phosphors for high-brightness white LEDs/LDs

2016 ◽  
Author(s):  
Encarnación G. Víllora ◽  
Stelian Arjoca ◽  
Daisuke Inomata ◽  
Kiyoshi Shimamura
Keyword(s):  
Single Crystal ◽  
High Brightness ◽  
White Leds

Growth and optical properties of (Y1−xGdx)3Al5O12:Ce single crystal phosphors for high-brightness neutral white LEDs and LDs

CrystEngComm ◽  
2016 ◽  
Vol 18 (25) ◽  
pp. 4799-4806 ◽  
Author(s):  
Stelian Arjoca ◽  
Daisuke Inomata ◽  
Yoshitaka Matsushita ◽  
Kiyoshi Shimamura
Keyword(s):  
Optical Properties ◽  
Single Crystal ◽  
High Brightness ◽  
White Leds

All-Inorganic Light Convertor Based on Phosphor-in-Glass Engineering for Next-Generation Modular High-Brightness White LEDs/LDs

ACS Photonics ◽  
2017 ◽  
Vol 4 (4) ◽  
pp. 986-995 ◽  
Author(s):  
Xuejie Zhang ◽  
Jinbo Yu ◽  
Jing Wang ◽  
Bingfu Lei ◽  
Yingliang Liu ◽  
...  
Keyword(s):  
Next Generation ◽  
High Brightness ◽  
White Leds

Temperature dependence of Ce:YAG single-crystal phosphors for high-brightness white LEDs/LDs

2015 ◽  
Vol 2 (5) ◽  
pp. 055503 ◽  
Author(s):  
Stelian Arjoca ◽  
Encarnación G Víllora ◽  
Daisuke Inomata ◽  
Kazuo Aoki ◽  
Yoshiyuki Sugahara ◽  
...  
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
High Brightness ◽  
White Leds
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