Large-area IAD with a new plasma source

1990 ◽  
Author(s):  
Alfons Zoeller ◽  
Rainer Goetzelmann ◽  
Reinhard Herrmann ◽  
K. Matl
Keyword(s):  
Plasma Source ◽  
Large Area

Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Plasma Source ◽  
Direct Writing ◽  
Large Area ◽  
Depth Profiles ◽  
Geometric Patterns ◽  
Planar Coil ◽  
Rf Antenna

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath

Development of a large-area planar surface-wave plasma source with a cavity launcher driven by a 915 MHz UHF wave

2013 ◽  
Vol 22 (2) ◽  
pp. 025002 ◽  
Author(s):  
Xijiang Chang ◽  
Kazuki Kunii ◽  
Rongqing Liang ◽  
Masaaki Nagatsu
Keyword(s):  
Surface Wave ◽  
Plasma Source ◽  
Planar Surface ◽  
Large Area

Low Inductance Antenna (LIA) plasma source and plasma-enhanced dual rotatable magnetron sputter assisted with LIA

2015 ◽  
Vol 2015 (1) ◽  
pp. 000757-000760
Author(s):  
Y. Takaya ◽  
Y. Tanioka ◽  
H. Yoshino ◽  
A. Osawa
Keyword(s):  
Inductively Coupled Plasma ◽  
Low Voltage ◽  
Polymer Surface ◽  
Plasma Source ◽  
Large Area ◽  
Plasma Damage ◽  
Inductively Coupled ◽  
Temperature Deposition ◽  
Magnetron Sputter ◽  
Plasma Profile

In recent years, both low plasma damage and low temperature deposition technic for polymer substrates (e.g. PCB, films and etc.) are often required. We have developed a plasma enhanced dual rotatable magnetron sputter source assisted with inductively coupled plasma (ICP) using low inductance antenna (LIA). LIA has same unique characteristics, a)low voltage high density plasma, b)well controllability of plasma profile to ensure uniformity over large area, c)ionization of sputtered particle and etc. when in being used as a plasma assistant, and besides, LIA can be used as a ICP source for polymer surface modification. We introduce a variety of the possibilities of whether this sputter source is usable for the process of the fabrication of PCB.

Development of a large-area, multi-helicon rectangular plasma source for TFT-LCD processing

2003 ◽  
Vol 435 (1-2) ◽  
pp. 270-274 ◽  
Author(s):  
Yoon Jae Kim ◽  
Seung Ho Han ◽  
Won Hwang ◽  
Y.S. Hwang
Keyword(s):  
Plasma Source ◽  
Large Area

ICCD Imaging of Coexisting Arc Roots and Arc Column in a Large-Area Dispersed Arc-Plasma Source

2008 ◽  
Vol 36 (4) ◽  
pp. 1084-1085 ◽  
Author(s):  
He-Ling Zhou ◽  
Lin-Cun Li ◽  
Liang Cheng ◽  
Zhi-Peng Zhou ◽  
Bing Bai ◽  
...  
Keyword(s):  
Plasma Source ◽  
Arc Plasma ◽  
Large Area

Problems of Power Feeding in Large Area PECVD of Amorphous Silicon

1999 ◽  
Vol 557 ◽  
Author(s):  
U. Stephan ◽  
J. Kuske ◽  
H. Grüger ◽  
A. Kottwitz
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Standing Waves ◽  
Plasma Source ◽  
High Deposition Rate ◽  
Plasma Reactors ◽  
Power Losses ◽  
Large Area ◽  
Power Coupling ◽  
Reactor Types

AbstractThe production of amorphous silicon, e.g. for solar cells, requires large area, high-deposition rate plasma reactors. Increasing the radio frequency from the conventional 13.56MHz up to VHF has demonstrated higher deposition and etch rates and lower particle generation, a reduced ion bombardement and lower breakdown, process and bias voltages.But otherwise the use of VHF leads to some problems. The non-uniformity of deposition rate increase due to the generation of standing waves (TEM wave) and evanescent waveguide modes (TE waves) at the electrode surface.Increasing the frequency and/or the deposition area the plasma impedance, the capacitic stray impedance of the RF electrode and other parasitic capacitive impedances decrease. Increasing the frequency and/or the RF power, the phase angle of the discharge and of the impedance at every point at the lines between the RF matching network an the RF electrode tends more and more towards -90°. This results in increasing currents and standing waves with extremly high local current maximas. Increasing resistances of lines and contacts due to the skin effect and loss-caused heating up of the lines the power losses increase extremely, up to 90% and more. In spite of the increasing of the coupled power, the plasma power does not increase. Thermal destructions of the lines due to extreme expansion or melting are possible.Some solutions to reduce the non-uniformity of the deposition rate like multipower feeding, central backside power feeding, electrode segmentation, use of load impedances, published in former publications, will be discussed in connection with several reactor types (coaxial, large area, long plasma source) in view of the efficiency of power coupling and the practical realization. Solutions to minimize the power losses at the lines will be presented.

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