Coaxial tunnel junctions: a novel approach to reduce the current crowding effect in electrically-pumped VECSELs

2014 ◽  
Author(s):  
J. Walczak ◽  
M. Wasiak ◽  
R. P. Sarzala ◽  
A. Sirbu ◽  
E. Kapon ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Current Crowding ◽  
Crowding Effect ◽  
Novel Approach ◽  
Electrically Pumped

Analytical method for two dimensional current crowding effect in magnetic tunnel junctions

2002 ◽  
Vol 91 (10) ◽  
pp. 8783 ◽  
Author(s):  
Jian Chen ◽  
Yun Li ◽  
Janusz Nowak ◽  
Juan Fernandez de-Castro
Keyword(s):  
Analytical Method ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional ◽  
Current Crowding ◽  
Crowding Effect

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

2018 ◽  
Vol 32 (15) ◽  
pp. 1850157 ◽  
Author(s):  
Yue-Gie Liaw ◽  
Chii-Wen Chen ◽  
Wen-Shiang Liao ◽  
Mu-Chun Wang ◽  
Xuecheng Zou
Keyword(s):  
Gate Oxide ◽  
Silicon On Insulator ◽  
Double Gate ◽  
Current Crowding ◽  
Crowding Effect ◽  
Short Channel ◽  
Channel Mobility ◽  
Channel Effect ◽  
193 Nm ◽  
Dry Etch

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of [Formula: see text]–[Formula: see text] characteristics, threshold voltage [Formula: see text], and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance [Formula: see text], channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance [Formula: see text] and drive current.

Origin of the longitudinal current crowding effect in high power diode lasers

2021 ◽  
Author(s):  
Paul O. Leisher ◽  
Michelle Labrecque ◽  
Kevin McClune ◽  
Elliot Burke ◽  
Daniel Renner ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Current Crowding ◽  
Crowding Effect ◽  
Longitudinal Current ◽  
Power Diode

Study of Current Crowding Effect and Reliability of LED Devices

2013 ◽  
Vol 34 (8) ◽  
pp. 1051-1056
Author(s):  
吴艳艳 WU Yan-yan ◽  
冯士维 FENG Shi-wei ◽  
乔彦斌 QIAO Yan-bin ◽  
魏光华 WEI Guang-hua ◽  
张建伟 ZHANG Jian-wei
Keyword(s):  
Current Crowding ◽  
Crowding Effect

scholarly journals Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2195
Author(s):  
Marta Więckowska ◽  
Robert P. Sarzała ◽  
Rafał Ledzion ◽  
Maciej Dems
Keyword(s):  
Numerical Analysis ◽  
Current Crowding ◽  
Crowding Effect ◽  
Factors Influencing ◽  
Mode Selectivity ◽  
Lateral Mode ◽  
Mode Discrimination ◽  
Lateral Modes ◽  
The Impact ◽  
Side Mode

Use of antiresonant structures is a proven, efficient method of improving lateral mode selectivity in VCSELs. In this paper, we analyze the impact of a low-refractive antiresonant oxide island buried in a top VCSEL mirror on the lasing conditions of lateral modes of different orders. By performing comprehensive thermal, electrical, and optical numerical analysis of the VCSEL device, we show the impact of the size and location of the oxide island on the current-crowding effect and compute threshold currents for various lateral modes. If the island is placed close to the cavity, the threshold shows strong oscillations, which for moderate island distances can be tuned to increase the side mode discrimination. We are therefore able to pinpoint the most important factors influencing mode discrimination and to identify oxide island parameters capable of providing single-lateral-mode emission.

Theoretical Analysis of Current Crowding Effect in Metal/AlGaN/GaN Schottky Diodes and Its Reduction by Using Polysilicon in Anode

2007 ◽  
Vol 24 (7) ◽  
pp. 2112-2114 ◽  
Author(s):  
Chen Jia-Rong ◽  
Chen Wen-Jin ◽  
Wang Yu-Qi ◽  
Qiu Kai ◽  
Li Xin-Hua ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Schottky Diodes ◽  
Current Crowding ◽  
Crowding Effect
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