Modeling a monocrystalline Cu(In,Ga)Se2single junction solar cell grown on a GaAs substrate

2013 ◽  
Author(s):  
F. Bouchard ◽  
A. W. Walker ◽  
Z. Mi ◽  
K. Hinzer
Keyword(s):  
Solar Cell ◽  
Gaas Substrate ◽  
Junction Solar Cell

InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10$^{\circ}$ off Misoriented GaAs Substrate

2012 ◽  
Vol 51 ◽  
pp. 080208
Author(s):  
Hung Wei Yu ◽  
Chen Chen Chung ◽  
Chin Te Wang ◽  
Hong Quan Nguyen ◽  
Binh Tinh Tran ◽  
...  
Keyword(s):  
Solar Cell ◽  
Gaas Substrate ◽  
Tunnel Diode ◽  
Junction Solar Cell

InGaP/GaAs Dual-Junction Solar Cell with AlGaAs/GaAs Tunnel Diode Grown on 10° off Misoriented GaAs Substrate

2012 ◽  
Vol 51 (8R) ◽  
pp. 080208
Author(s):  
Hung Wei Yu ◽  
Chen Chen Chung ◽  
Chin Te Wang ◽  
Hong Quan Nguyen ◽  
Binh Tinh Tran ◽  
...  
Keyword(s):  
Solar Cell ◽  
Gaas Substrate ◽  
Tunnel Diode ◽  
Junction Solar Cell

The Effect of Concentrated Light Intensity on Temperature Coefficient of the InGaP/InGaAs/Ge Triple-Junction Solar Cell

2015 ◽  
Vol 8 (1) ◽  
pp. 106-111 ◽  
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Wei Zhao ◽  
Zhigang Zhou ◽  
Mengxun Chen
Keyword(s):  
Solar Cell ◽  
Light Intensity ◽  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Triple Junction ◽  
Concentration Ratio ◽  
Crystalline Silicon ◽  
Photovoltaic System ◽  
Solar Pv ◽  
Junction Solar Cell

Research on automatic tracking solar concentrator photovoltaic systems has gained increasing attention in developing the solar PV technology. A paraboloidal concentrator with secondary optic is developed for a three-junction GaInP/GalnAs/Ge solar cell. The concentration ratio of this system is 200 and the photovoltaic cell is cooled by the heat pipe. A detailed analysis on the temperature coefficient influence factors of triple-junction solar cell under different high concentrations (75X, 100X, 125X, 150X, 175X and 200X) has been conducted based on the dish-style concentration photovoltaic system. The results show that under high concentrated light intensity, the temperature coefficient of Voc of triple-junction solar cell is increasing as the concentration ratio increases, from -10.84 mV/°C @ 75X growth to -4.73mV/°C @ 200X. At low concentration, the temperature coefficient of Voc increases rapidly, and then increases slowly as the concentration ratio increases. The temperature dependence of η increased from -0.346%/°C @ 75X growth to - 0.103%/°C @ 200X and the temperature dependence of Pmm and FF increased from -0.125 W/°C, -0.35%/°C @ 75X growth to -0.048W/°C, -0.076%/°C @ 200X respectively. It indicated that the temperature coefficient of three-junction GaInP/GalnAs/Ge solar cell is better than that of crystalline silicon cell array under concentrating light intensity.

scholarly journals Wireless photoelectrochemical water splitting using triple-junction solar cell protected by TiO2

2021 ◽  
Vol 2 (2) ◽  
pp. 100340
Author(s):  
Choongman Moon ◽  
Brian Seger ◽  
Peter Christian Kjærgaard Vesborg ◽  
Ole Hansen ◽  
Ib Chorkendorff
Keyword(s):  
Solar Cell ◽  
Water Splitting ◽  
Triple Junction ◽  
Photoelectrochemical Water Splitting ◽  
Junction Solar Cell

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Strain Dependent Performance Analysis of InGaN Multi-junction Solar Cell

2021 ◽  
Author(s):  
Md. Aminur Rahman ◽  
Md. Jahirul Islam ◽  
Md. Rafiqul Islam ◽  
M. A. Parvez Mahmud
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Junction Solar Cell ◽  
Strain Dependent
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