scholarly journals Investigating extremely low resistance ohmic contacts to silicon carbide using a novel test structure

2013 ◽  
Author(s):  
Yue Pan ◽  
Aaron M. Collins ◽  
Fahid Algahtani ◽  
Patrick W. Leech ◽  
Geoffrey K. Reeves ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Test Structure ◽  
Low Resistance

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

A Test Structure to Characterize Nano-Scale Ohmic Contacts in III-V MOSFETs

2014 ◽  
Vol 35 (2) ◽  
pp. 178-180 ◽  
Author(s):  
Wenjie Lu ◽  
Alex Guo ◽  
Alon Vardi ◽  
Jesus A. del Alamo
Keyword(s):  
Ohmic Contacts ◽  
Test Structure ◽  
Nano Scale

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

2012 ◽  
Vol 12 (1) ◽  
pp. 225-227 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Sang Youl Lee ◽  
June O. Song ◽  
Tae-Yeon Seong
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To InP-Based Photonic Devices

1989 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
P. M. Thomas ◽  
W. C. Dautremont-Smith
Keyword(s):  
Ohmic Contacts ◽  
Photonic Devices ◽  
Low Resistance

Very low resistance non-alloyed ohmic contacts using as-rich GaAs

2005 ◽  
Author(s):  
M.P. Patkar ◽  
T.P. Chin ◽  
J.M. Woodall ◽  
M.S. Lundstrom ◽  
M.R. Melloch
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance

Investigation of low- and high-resistance Ni–Ge–Au ohmic contacts to n+ GaAs using electron microbeam and surface analytical techniques

1996 ◽  
Vol 11 (5) ◽  
pp. 1244-1254 ◽  
Author(s):  
Nancy E. Lumpkin ◽  
Gregory R. Lumpkin ◽  
K. S. A. Butcher
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contacts ◽  
Analytical Electron Microscopy ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Two Phase ◽  
Low Resistance ◽  
Fine Grained ◽  
Multiphase Microstructure ◽  
Transmission Electron

A process for the formation of low-resistance Ni–Ge–Au ohmic contacts to n+ GaAs has been refined using multivariable screening and response surface experiments. Samples from the refined, low-resistance process (which measure 0.05 ± 0.02 Ω · mm) and the unrefined, higher resistance process (0.17 ± 0.02 Ω · mm) were characterized using analytical electron microscopy (AEM), transmission electron microscopy (TEM), scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), and x-ray photoemission spectroscopy (XPS) depth profiling methods. This approach was used to identify microstructural differences and compare them with electrical resistance measurements. Analytical results of the unrefined ohmic process sample reveal a heterogeneous, multiphase microstructure with a rough alloy-GaAs interface. The sample from the refined ohmic process exhibits an alloy which is homogeneous, smooth, and has a fine-grained microstructure with two uniformly distributed phases. XPS analysis for the refined ohmic process sample indicates that the Ge content is relatively depleted in the alloy (relative to the deposited Ge amount) and enriched in the GaAs. This is not evidenced in the unrefined ohmic process sample. Our data lead us to conclude that a smooth, uniform, two-phase microstructure, coupled with a shift in Ge content from the post-alloy metal to the GaAs, is important in forming low-resistance ohmic contacts.

Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a-plane n-type GaN

2011 ◽  
Vol 98 (16) ◽  
pp. 161101 ◽  
Author(s):  
Dong Ho Kim ◽  
Su Jin Kim ◽  
Yu Jeong Seo ◽  
Tae Geun Kim ◽  
Sung Min Hwang
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance

scholarly journals Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Sang-Hyeok Cho ◽  
Kwanghee Cho ◽  
No-Won Park ◽  
Soonyong Park ◽  
Jung-Hyuk Koh ◽  
...  
Keyword(s):  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Low Resistance
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