Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To InP-Based Photonic Devices

1989 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
P. M. Thomas ◽  
W. C. Dautremont-Smith
Keyword(s):  
Ohmic Contacts ◽  
Photonic Devices ◽  
Low Resistance

Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts to InP-Based Photonic Devices

1989 ◽  
Vol 146 ◽  
Author(s):  
A. Katz ◽  
S. N. G. Chu ◽  
P. M. Thomas ◽  
W. C. Dautremont-Smith
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Metal Layer ◽  
Photonic Devices ◽  
Electrical Performance ◽  
Specific Contact Resistance ◽  
Low Resistance ◽  
Specific Contact ◽  
20 Nm ◽  
Resistance Value

ABSTRACTPt/ri low resistance non-alloyed ohmic contacts to p-InP-based contact layers in photonic devices, which were formed by rapid thermal processing (RTP), were studied. E-gun evaporated Pt/Ti metallization deposited onto 1.5· 1019 cm−3 Zn doped In0.53Ga0.47 As yielded the best electrical performance. These contacts were ohmic as deposited with a specific contact resistance value of 3.0 · 10−4 Ωcm2. RTP at higher temperatures led to decrease of the specific contact resistance to 3.4 · 10−8 Ωcm2 (0.08Ωmm) as a result of heating at 450°C for 30 sec. This heat treatment caused only a limited interfacial reaction (about 20 nm thick) between the Ti and the InGaAs, resulted in a thermally stable contact and induced tensile stress of 5.6 · 109 dyne · cm−2 at the metal layer but without degrading the adhesion. Heating at temperatures higher than 500°C resulted in an extensive interaction and degradation of the contact.

Low-resistance Cr/Al Ohmic contacts to N-polar n-type GaN for high-performance vertical light-emitting diodes

2012 ◽  
Vol 12 (1) ◽  
pp. 225-227 ◽  
Author(s):  
Joon-Woo Jeon ◽  
Sang Youl Lee ◽  
June O. Song ◽  
Tae-Yeon Seong
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance

Very low resistance non-alloyed ohmic contacts using as-rich GaAs

2005 ◽  
Author(s):  
M.P. Patkar ◽  
T.P. Chin ◽  
J.M. Woodall ◽  
M.S. Lundstrom ◽  
M.R. Melloch
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance

Investigation of low- and high-resistance Ni–Ge–Au ohmic contacts to n+ GaAs using electron microbeam and surface analytical techniques

1996 ◽  
Vol 11 (5) ◽  
pp. 1244-1254 ◽  
Author(s):  
Nancy E. Lumpkin ◽  
Gregory R. Lumpkin ◽  
K. S. A. Butcher
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contacts ◽  
Analytical Electron Microscopy ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Two Phase ◽  
Low Resistance ◽  
Fine Grained ◽  
Multiphase Microstructure ◽  
Transmission Electron

A process for the formation of low-resistance Ni–Ge–Au ohmic contacts to n+ GaAs has been refined using multivariable screening and response surface experiments. Samples from the refined, low-resistance process (which measure 0.05 ± 0.02 Ω · mm) and the unrefined, higher resistance process (0.17 ± 0.02 Ω · mm) were characterized using analytical electron microscopy (AEM), transmission electron microscopy (TEM), scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), and x-ray photoemission spectroscopy (XPS) depth profiling methods. This approach was used to identify microstructural differences and compare them with electrical resistance measurements. Analytical results of the unrefined ohmic process sample reveal a heterogeneous, multiphase microstructure with a rough alloy-GaAs interface. The sample from the refined ohmic process exhibits an alloy which is homogeneous, smooth, and has a fine-grained microstructure with two uniformly distributed phases. XPS analysis for the refined ohmic process sample indicates that the Ge content is relatively depleted in the alloy (relative to the deposited Ge amount) and enriched in the GaAs. This is not evidenced in the unrefined ohmic process sample. Our data lead us to conclude that a smooth, uniform, two-phase microstructure, coupled with a shift in Ge content from the post-alloy metal to the GaAs, is important in forming low-resistance ohmic contacts.

Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a-plane n-type GaN

2011 ◽  
Vol 98 (16) ◽  
pp. 161101 ◽  
Author(s):  
Dong Ho Kim ◽  
Su Jin Kim ◽  
Yu Jeong Seo ◽  
Tae Geun Kim ◽  
Sung Min Hwang
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance

scholarly journals Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Sang-Hyeok Cho ◽  
Kwanghee Cho ◽  
No-Won Park ◽  
Soonyong Park ◽  
Jung-Hyuk Koh ◽  
...  
Keyword(s):  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Low Resistance

On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

2016 ◽  
Vol 50 (8) ◽  
pp. 1117-1121 ◽  
Author(s):  
S. S. Arutyunyan ◽  
A. Yu. Pavlov ◽  
B. Yu. Pavlov ◽  
K. N. Tomosh ◽  
Yu. V. Fedorov
Keyword(s):  
Ohmic Contacts ◽  
Low Resistance ◽  
Gan Hemts

scholarly journals Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts

2004 ◽  
Vol 261 (2-3) ◽  
pp. 379-384 ◽  
Author(s):  
C.A. Wang ◽  
D.A. Shiau ◽  
R.K. Huang ◽  
C.T. Harris ◽  
M.K. Connors
Keyword(s):  
Vapor Phase ◽  
Ohmic Contacts ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Low Resistance
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