Investigation of Yb:LuAG crystals with high doping concentration

2013 ◽  
Author(s):  
Jan Šulc ◽  
Zbyněk Hubka ◽  
Helena JelÍnková ◽  
Karel Nejezchleb ◽  
Václav Ŝkoda
Keyword(s):  
Doping Concentration ◽  
High Doping Concentration

Direct monitoring of the recombination zone in highly efficient phosphorescent organic light-emitting diodes based on a high-doping concentration emitting system

2019 ◽  
Vol 7 (42) ◽  
pp. 13287-13293
Author(s):  
Jianan Xue ◽  
Jie Liang ◽  
Xinze Liu ◽  
Hao Zhang ◽  
Kaiqi Ye ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Highly Efficient ◽  
High Doping Concentration ◽  
Organic Light ◽  
System P ◽  
Recombination Zone

The high-content bipolar phosphor (ppy)2Ir(dipba) can dominate the EL process and the recombination zone is almost broadened as wide as the whole EML in D4, leading to remarkably higher efficiency level of D4 than that of D2 based on (ppy)2Ir(acac).

Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

2012 ◽  
Vol 485 ◽  
pp. 144-148
Author(s):  
Jian Lin Chen ◽  
Yan Jie Ren ◽  
Jian Chen ◽  
Jian Jun He ◽  
Ding Chen
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
High Doping Concentration ◽  
Doped Zno ◽  
Surface Morphologies

Preferentially oriented Al-doped ZnO thin films with doping concentration of 1, 2, 3, 5 and 10 mol% respectively were prepared on glass substrates via sol-gel route. The crystallinity of films was characterized by X-ray diffraction and the surface morphologies were observed by scanning electron microscopy. The results show that ZnO:Al films at low doping concentration (1, 2 mol%) grow into dense homogenous microstructure. However, as for high doping concentration (3, 5, 10 mol%), Al3+ precipitate in the form of amorphous Al2O3 and ZnO:Al films exhibit heterogeneous nucleation and exceptional growth of the big plate-like crystals at the interface of the amorphous Al2O3 and ZnO:Al matrix.

Over 1 Watt THz QCLs with high doping concentration and variable Al composition in active structure

2021 ◽  
Author(s):  
Tsung-Tse Lin ◽  
Li Wang ◽  
Ke Wang ◽  
Thomas Grange ◽  
Stefan Birner ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Active Structure ◽  
High Doping Concentration

Dependence of Effective Doping Concentration on the Molecular Structure of Dopant: ABCV-P Doped OLEDs with Broad Range of and High Doping Concentration

2008 ◽  
Vol 491 (1) ◽  
pp. 40-52 ◽  
Author(s):  
Seung Han Lim ◽  
Gweon Young Ryu ◽  
Gu Young Kim ◽  
Ji Hoon Seo ◽  
Young Kwan Kim ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Doping Concentration ◽  
High Doping Concentration

scholarly journals P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

2005 ◽  
Vol 483-485 ◽  
pp. 633-636 ◽  
Author(s):  
Mihai Lazar ◽  
Christophe Jacquier ◽  
Christiane Dubois ◽  
Christophe Raynaud ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Sheet Resistance ◽  
Doping Concentration ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Substrate Interface ◽  
Selective Epitaxial Growth ◽  
High Doping Concentration ◽  
P Type

Al-Si patterns were formed on n-type 4H-SiC substrate by a photolithographic process including wet Al etching and Si/SiC reactive ion etching (RIE) process. RF 1000°C annealing under C3H8 flow was performed to obtain p+ SiC layers by a Vapour-Liquid-Solid (VLS) process. This method enables to grow layers with different width (up to 800 µm) and various shapes. Nevertheless the remaining Al-based droplets on the largest patterns are indicators of crack defects, going through the p+ layer down to the substrate. SIMS analyses have shown an Al profile with high doping concentration near the surface, high N compensation and Si/C stoechiometry variation between the substrate and the VLS layer. The hydrogen profile follows the Al profile in the VLS layer with an overshoot at the VLS/substrate interface. I-V measurements performed directly on the semiconductor layers have confirmed the formed p-n junction and allowed to measure a sheet resistance of 5.5 kW/ı

Achieving High Doping Concentration by Dopant Vapor Deposition in Organic Solar Cells

2019 ◽  
Vol 11 (4) ◽  
pp. 4178-4184 ◽  
Author(s):  
Han Yan ◽  
Yabing Tang ◽  
Xiangyi Meng ◽  
Tong Xiao ◽  
Guanghao Lu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Vapor Deposition ◽  
Doping Concentration ◽  
High Doping Concentration
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