Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 × 1018cm−3and silicon-on-insulator thickness of less than 10 nm

2011 ◽  
Vol 110 (3) ◽  
pp. 034502 ◽  
Author(s):  
Naotoshi Kadotani ◽  
Tsunaki Takahashi ◽  
Teruyuki Ohashi ◽  
Shunri Oda ◽  
Ken Uchida
Keyword(s):  
Electron Mobility ◽  
Doping Concentration ◽  
Silicon On Insulator ◽  
High Doping Concentration ◽  
Diffusion Layers

Direct monitoring of the recombination zone in highly efficient phosphorescent organic light-emitting diodes based on a high-doping concentration emitting system

2019 ◽  
Vol 7 (42) ◽  
pp. 13287-13293
Author(s):  
Jianan Xue ◽  
Jie Liang ◽  
Xinze Liu ◽  
Hao Zhang ◽  
Kaiqi Ye ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Highly Efficient ◽  
High Doping Concentration ◽  
Organic Light ◽  
System P ◽  
Recombination Zone

The high-content bipolar phosphor (ppy)2Ir(dipba) can dominate the EL process and the recombination zone is almost broadened as wide as the whole EML in D4, leading to remarkably higher efficiency level of D4 than that of D2 based on (ppy)2Ir(acac).

An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO2 Interface

2013 ◽  
Vol 854 ◽  
pp. 3-10
Author(s):  
O.V. Naumova ◽  
B. Fomin ◽  
V.P. Popov ◽  
Victor Strelchuk ◽  
A. Nikolenko ◽  
...  
Keyword(s):  
Experimental Study ◽  
Raman Spectroscopy ◽  
Structural Properties ◽  
Electron Density ◽  
Electron Mobility ◽  
Structural Modification ◽  
Silicon On Insulator ◽  
Float Zone ◽  
Bonded Interface ◽  
Ultrathin Soi

Properties of Si/buried oxide (BOX) systems with bonded interface in silicon-on-insulator (SOI) wafers were studied in this paper. Results show impact of the starting Si material - Czochralski (Cz) or float-zone (Fz) grown silicon on the electron mobility (μe) and BOX charge behavior in ultrathin SOI layers. In particular, there were found: 1) the μe ~ Ne-0.3 dependencies at the electron density Ne in the range of 4х (1011-1012) cm-2 in accumulation Cz-SOI layers with the μe degradation when Si thickness decreases from 20 to 9 nm, and 2) the ~ Ne-0.6 behavior of mobility with no degradation in Fz-SOI layers. Raman spectroscopy shows the structural modification of Cz-SOI layers. An origin of degradation of the electrical and structural properties for ultrathin SOI layer is discussed.

Electron Mobility Model of Strained Si1-xGex(001)

2011 ◽  
Vol 181-182 ◽  
pp. 378-382
Author(s):  
Hui Yong Hu ◽  
Shuai Lei ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Bin Shu
Keyword(s):  
Effective Mass ◽  
Density Of States ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Golden Rule ◽  
Mobility Model ◽  
Collision Term ◽  
Strained Si ◽  
Scattering Rate ◽  
Kp Theory

Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si1-xGex(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si1-xGex(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si1-xGex(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si1-xGexmaterials and the design of devices.

scholarly journals Effect of Ge Diffusion on AlxGa1-xN/GaN High Electron Mobility Transistors on a Thin Silicon-On-Insulator

2013 ◽  
Vol 2 (12) ◽  
pp. Q105-Q108
Author(s):  
L. K. Bera ◽  
W. H. Tham ◽  
R. S. Kajen ◽  
S. B. Dolmanan ◽  
M. Krishna Kumar ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Silicon On Insulator ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Thin Silicon

Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

2012 ◽  
Vol 485 ◽  
pp. 144-148
Author(s):  
Jian Lin Chen ◽  
Yan Jie Ren ◽  
Jian Chen ◽  
Jian Jun He ◽  
Ding Chen
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
High Doping Concentration ◽  
Doped Zno ◽  
Surface Morphologies

Preferentially oriented Al-doped ZnO thin films with doping concentration of 1, 2, 3, 5 and 10 mol% respectively were prepared on glass substrates via sol-gel route. The crystallinity of films was characterized by X-ray diffraction and the surface morphologies were observed by scanning electron microscopy. The results show that ZnO:Al films at low doping concentration (1, 2 mol%) grow into dense homogenous microstructure. However, as for high doping concentration (3, 5, 10 mol%), Al3+ precipitate in the form of amorphous Al2O3 and ZnO:Al films exhibit heterogeneous nucleation and exceptional growth of the big plate-like crystals at the interface of the amorphous Al2O3 and ZnO:Al matrix.

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