Development of maskless electron-beam lithography using nc-Si electron-emitter array

2013 ◽  
Author(s):  
A. Kojima ◽  
N. Ikegami ◽  
T. Yoshida ◽  
H. Miyaguchi ◽  
M. Muroyama ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Electron Emitter ◽  
Emitter Array

Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

2014 ◽  
Vol 134 (6) ◽  
pp. 146-153 ◽  
Author(s):  
Hitoshi Nishino ◽  
Shinya Yoshida ◽  
Akira Kojima ◽  
Nokatsu Ikegami ◽  
Shuji Tanaka ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Massively Parallel ◽  
Electron Emitter ◽  
Emitter Array ◽  
Nanocrystalline Si

Active-matrix nc-Si electron emitter array for massively parallel direct-write electron-beam system

2012 ◽  
Author(s):  
N. Ikegami ◽  
T. Yoshida ◽  
A. Kojima ◽  
H. Ohyi ◽  
N. Koshida ◽  
...  
Keyword(s):  
Electron Beam ◽  
Massively Parallel ◽  
Direct Write ◽  
Active Matrix ◽  
Electron Emitter ◽  
Beam System ◽  
Emitter Array

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction
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