Advances in high power and high brightness laser bars with enhanced reliability

2013 ◽  
Author(s):  
Haiyan An ◽  
Ching-Long (John) Jiang ◽  
Yihan Xiong ◽  
Aloysius Inyang ◽  
Qiang Zhang ◽  
...  
Keyword(s):  
High Power ◽  
High Brightness

High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm

2002 ◽  
Author(s):  
Marc T. Kelemen ◽  
Franz Rinner ◽  
Joseph Rogg ◽  
Nicolas Wiedmann ◽  
Rudolf Kiefer ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Ridge Waveguide ◽  
High Brightness

A high power high-brightness multi-single-emitter laser pump platform

2009 ◽  
Author(s):  
Xiangdong Qiu ◽  
YuZhong Dai ◽  
Michael Au ◽  
James Guo ◽  
Vince Wong ◽  
...  
Keyword(s):  
High Power ◽  
High Brightness ◽  
Laser Pump ◽  
Single Emitter

High-power, high-brightness 100W QCW diode laser at 940nm

2007 ◽  
Author(s):  
C. Fiebig ◽  
G. Erbert ◽  
W. Pittroff ◽  
H. Wenzel ◽  
A. Maaßdorf ◽  
...  
Keyword(s):  
Diode Laser ◽  
High Power ◽  
High Brightness

Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 μm

1998 ◽  
Author(s):  
Hong K. Choi ◽  
George W. Turner ◽  
James N. Walpole ◽  
M. J. Manfra ◽  
M. K. Connors ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
High Brightness ◽  
Low Threshold

High-brightness, high-power diode-pumped lasers

2002 ◽  
Author(s):  
J.R. Unternahrer ◽  
M.J. Kukla ◽  
R. Burnham ◽  
G. Witt
Keyword(s):  
High Power ◽  
High Brightness ◽  
Diode Pumped ◽  
Power Diode

Evaluation of Test Protocol for Eutectic Die Attach Using High Power LEDs

2011 ◽  
Vol 2011 (1) ◽  
pp. 000136-000141 ◽  
Author(s):  
Amanda Hartnett ◽  
Seth Homer ◽  
Donald Beck ◽  
Daniel Evans
Keyword(s):  
High Power ◽  
Coefficient Of Thermal Expansion ◽  
Test Methods ◽  
Test Protocol ◽  
High Brightness ◽  
Light Emitting ◽  
Power Semiconductor ◽  
Heat System ◽  
Die Attach ◽  
Manufactured Products

High-power semiconductor devices, such as high-brightness Light Emitting Diodes (LEDs), must be mounted using a robust adhesive material to handle the temperature fluctuations generated by the chip and the mechanical stresses due to the coefficient of thermal expansion (CTE) mismatches between the die material and substrate it is mounted to. The selected material must also comply with current legislation restricting manufactured products containing numerous materials including some that were historically popular in HB LED applications due to environmental concerns. Eutectic gold-tin (AuSn) materials meet these requirements, and process recommendations for their implementation will be presented in this paper. Utilizing a Palomar Technologies die bonder, AuSn solder preforms and paste will be placed/dispensed and reflowed using a Pulsed Heat System (PHS). Evaluation methods comparing these means of eutectic die attach to a pre-plated AuSn die will be discussed. Technical generalizations will be detailed to explain the derivation of test methods as well as hypotheses of results.

Realizing high-brightness and ultra-wide-color-gamut laser-driven backlighting by using laminated phosphor-in-glass (PiG) films

2020 ◽  
Vol 8 (5) ◽  
pp. 1746-1754 ◽  
Author(s):  
Le Wang ◽  
Ran Wei ◽  
Peng Zheng ◽  
Shihai You ◽  
Tian-Liang Zhou ◽  
...  
Keyword(s):  
High Power ◽  
Color Gamut ◽  
High Brightness ◽  
Wide Color Gamut

The laminated PiG films are promising color converters for use in high-power and wide-color-gamut laser-driven display applications.

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