Analysis of thermally activated leakage current in a low-threshold-current quantum-cascade laser emitting at 3.9 μm

Author(s):  
Yuri V. Flores ◽  
Grygorii Monastyrskyi ◽  
Mikaela Elagin ◽  
Mykhaylo P. Semtsiv ◽  
W. Ted Masselink
2007 ◽  
Vol 24 (3) ◽  
pp. 717-720 ◽  
Author(s):  
Shao Ye ◽  
Li Lu ◽  
Liu Jun-Qi ◽  
Liu Feng-Qi ◽  
Wang Zhan-Guo

2018 ◽  
Vol 13 (1) ◽  
Author(s):  
Xuefeng Jia ◽  
Lijun Wang ◽  
Zhiwei Jia ◽  
Ning Zhuo ◽  
Jinchuan Zhang ◽  
...  

2021 ◽  
Author(s):  
Zhixin Wang ◽  
Filippos Kapsalidis ◽  
Ruijun Wang ◽  
Mattias Beck ◽  
Giacomo Scalari ◽  
...  

Author(s):  
А.В. Бабичев ◽  
А.Г. Гладышев ◽  
Д.В. Денисов ◽  
В.В. Дюделев ◽  
Д.А. Михайлов ◽  
...  

The possibility of fabrication of 4.6 µm spectral range quantum-cascade laser heterostructures by molecular-beam epitaxy technique with non-selective overgrowth by the metalorganic vapour-phase epitaxy is shown. The active region of the laser was formed on the basis of a heteropair of In0.67Ga0.33As/In0.36Al0.64As solid alloys. The waveguide claddings are formed by indium phosphide. The results of surface defects inspection and X-ray diffraction analysis of quantum-cascade laser heterostructures allow to conclude that the structural quality of the heterostructures is high and the estimated value of the root mean square surface roughness does not exceed 0.7 nm. Lasers with four cleaved facets exhibit lasing at room temperature with a relatively low threshold current density of the order of 1 kA /cm2.


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