Issues of epitaxial growth and transport for room temperature cw blue/green laser diodes

1994 ◽  
Author(s):  
Mike D. Ringle ◽  
Donald C. Grillo ◽  
Yongping Fan ◽  
Guo-Chun Hua ◽  
Jung Han ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Room Temperature ◽  
Laser Diodes ◽  
Green Laser

Room temperature continuous operation of blue-green laser diodes

1993 ◽  
Vol 29 (16) ◽  
pp. 1488 ◽  
Author(s):  
N. Nakayama ◽  
S. Itoh ◽  
T. Ohata ◽  
K. Nakano ◽  
H. Okuyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Green Laser ◽  
Continuous Operation

Low-threshold room-temperature CW operation of ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

1998 ◽  
Vol 34 (5) ◽  
pp. 496 ◽  
Author(s):  
F. Nakanishi ◽  
H. Doi ◽  
N. Okuda ◽  
T. Matsuoka ◽  
K. Katayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Green Laser ◽  
Cw Operation ◽  
Low Threshold

scholarly journals Epitaxial growth of 2.5-μm quaternary AlInGaN for n-cladding layer in GaN-based green laser diodes

2021 ◽  
Author(s):  
Lingrong Jiang ◽  
Jianping Liu ◽  
Aiqin Tian ◽  
Masao Ikeda ◽  
Liqun Zhang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Laser Diodes ◽  
Green Laser ◽  
Cladding Layer

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

2010 ◽  
Vol 3 (9) ◽  
pp. 091201 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Haruhiko Kuwatsuka ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Continuous Wave Operation ◽  
Low Threshold

scholarly journals Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 690
Author(s):  
Leonardo Ranasinghe ◽  
Christian Heyn ◽  
Kristian Deneke ◽  
Michael Zocher ◽  
Roman Korneev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Penetration Depth ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Green Laser ◽  
Significant Loss ◽  
Blue Laser ◽  
Ambient Conditions ◽  
Thermal Escape ◽  
Intensity Loss

Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room temperature from self-assembled strain-free GaAs quantum dots (QDs) in refilled AlGaAs nanoholes on (001)GaAs substrate. Two major obstacles for room temperature operation are observed. The first is a strong radiative background from the GaAs substrate and the second a significant loss of intensity by more than four orders of magnitude between liquid helium and room temperature. We discuss results obtained on three different sample designs and two excitation wavelengths. The PL measurements are performed at room temperature and at T = 200 K, which is obtained using an inexpensive thermoelectric cooler. An optimized sample with an AlGaAs barrier layer thicker than the penetration depth of the exciting green laser light (532 nm) demonstrates clear QD peaks already at room temperature. Samples with thin AlGaAs layers show room temperature emission from the QDs when a blue laser (405 nm) with a reduced optical penetration depth is used for excitation. A model and a fit to the experimental behavior identify dissociation of excitons in the barrier below T = 100 K and thermal escape of excitons from QDs above T = 160 K as the central processes causing PL-intensity loss.

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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