Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system

1994 ◽  
Author(s):  
Tsuneaki Ohta ◽  
R. Kumar ◽  
Shuichi Noda ◽  
Masanori Kasai ◽  
Hiroshi Hoga
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray ◽  
Sin Membrane ◽  
Pressure Chemical

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

2016 ◽  
Vol 119 (14) ◽  
pp. 145702 ◽  
Author(s):  
Pramod Reddy ◽  
Shun Washiyama ◽  
Felix Kaess ◽  
M. Hayden Breckenridge ◽  
Luis H. Hernandez-Balderrama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Band Offsets ◽  
Pressure Chemical

SiC/SiN Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition

1995 ◽  
Vol 34 (12S) ◽  
pp. 6701 ◽  
Author(s):  
Tsuneaki Ohta ◽  
Shuichi Noda ◽  
Masanori Kasai ◽  
Hirosi Hoga Hirosi Hoga
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray ◽  
Pressure Chemical ◽  
Multilayer Membrane

Properties of Single-Crystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

1992 ◽  
Vol 282 ◽  
Author(s):  
I. Golecki ◽  
J. Marti ◽  
F. Reidinger
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Means Of Transmission ◽  
Sic Films

ABSTRACTMonocrystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750°C, the lowest temperature reported to date, by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. Hexagonal SiC films were obtained with the aid of a remote H2 plasma, which also increased the deposition rate through a reduction in the activation enthalpy. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our β-SiC films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus and the properties of the films.

Carbonization Layer Grown By Acetylene Reaction On Si(100) And (111) Surface Using Low Pressure Chemical Vapor Deposition

2012 ◽  
Author(s):  
Abdul Manaf Hashim ◽  
Kanji Yasui
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Probe Microanalysis ◽  
Crystal Orientation ◽  
Electron Probe ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray ◽  
Bonding State ◽  
Pressure Chemical

Permukaan karbonisasi pada Si(100) dan Si(111) menggunakan acetylene (C2H2) sebagai sumber karbon tunggal dibuat di dalam ruang endapan wap kimia (CVD) bertekanan rendah menggunakan teknik cepat panas. Kebergantungan kristaliniti, orientasi kristal dan keadaan ikatan lapisan karbonisasi ke atas kadar aliran acetylene, tekanan, suhu dan masa telah dievaluasi dengan menggunakan teknik pembelauan X–Ray dan analisis ‘electron probe microanalysis’. Lapisan karbonisasi stoikiometri dengan kristaliniti, orientasi kristal dan keadaan ikatan yang baik dapat dibentuk pada 1100°C dengan kadar aliran C2H2 sebanyak 2 sccm dan tekanan tindak balas pada 0.3 Torr. Kata kunci: Pembelauan X–ray; endapan wap kimia; campuran silikon separa–pengalir Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low–pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X–ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr. Key words: X–ray diffraction; chemical vapor deposition; semiconducting silicon compounds

Epitaxial Monocrystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

1992 ◽  
Vol 242 ◽  
Author(s):  
I. Golecki ◽  
F. Reidinger ◽  
J. Marti
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Means Of Transmission ◽  
Sic Films

ABSTRACTMonocrystalline, epitaxial cubic (100) SiC films have been grown on monocrystalline (100) Si substrates at 750°C, the lowest epitaxial growth temperature reported to date. The films were grown by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus used in this study and the properties of the films.

SiC/SiN Multilayer Membrane for X-Ray Mask Deposited by Low Pressure Chemical Vapor Deposition

1995 ◽  
Vol 34 (Part 1, No. 12B) ◽  
pp. 6701-6708 ◽  
Author(s):  
Tsuneaki Ohta ◽  
Shuichi Noda ◽  
Masanori Kasai ◽  
Hirosi Hoga
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray ◽  
Pressure Chemical ◽  
Multilayer Membrane
Sign in / Sign up

Export Citation Format

Share Document