Polarization reversal in ferroelectric thin films

1994 ◽  
Author(s):  
Beatriz Noheda ◽  
Tomas Iglesias ◽  
Gines Lifante ◽  
Jose A. Gonzalo de los Reyes
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

scholarly journals Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal ◽  
Temperature Scaling ◽  
Silicon Doped

scholarly journals Injection charge assisted polarization reversal in ferroelectric thin films

2007 ◽  
Vol 90 (7) ◽  
pp. 072910 ◽  
Author(s):  
Yunseok Kim ◽  
Simon Bühlmann ◽  
Seungbum Hong ◽  
Seung-Hyun Kim ◽  
Kwangsoo No
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal

scholarly journals Velocity of domain-wall motion during polarization reversal in ferroelectric thin films: Beyond Merz's Law

2015 ◽  
Vol 91 (5) ◽  
Author(s):  
Qingping Meng ◽  
Myung-Geun Han ◽  
Jing Tao ◽  
Guangyong Xu ◽  
David O. Welch ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal

Photovoltaic Effect in Thin Ferroelectric Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Philip S. Brody ◽  
B. J. Rod ◽  
L. P. Cook ◽  
P. K. Schenck
Keyword(s):  
Thin Films ◽  
Photovoltaic Effect ◽  
Ferroelectric Thin Films ◽  
Polarization Field ◽  
Polarization Reversal ◽  
Ferroelectric Films ◽  
Initial Current ◽  
Elapsed Time ◽  
Steady Current

AbstractPolarization-dependent photovoltaic currents are observed in continuously illuminated ferroelectric thin films under conditions of polarization reversal. Following reversal, an initial current rapidly decays to an essentially steady current, which then decays slowly with the current decreasing in proportion to the logarithm of elapsed time. These polarization-dependent currents are attributed to the action of internal fields on photocarriers where the fields result from the incomplete screening of the polarization field.

scholarly journals Effect of surface ionic screening on the polarization reversal scenario in ferroelectric thin films: Crossover from ferroionic to antiferroionic states

2017 ◽  
Vol 96 (24) ◽  
Author(s):  
Anna N. Morozovska ◽  
Eugene A. Eliseev ◽  
Anatolii I. Kurchak ◽  
Nicholas V. Morozovsky ◽  
Rama K. Vasudevan ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal ◽  
Effect Of Surface
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