Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy

1994 ◽  
Author(s):  
X. Y. Gong ◽  
Tomuo Yamaguchi ◽  
Hirofumi Kan ◽  
Toshihiko Makino ◽  
T. Nakatsukasa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

Optical properties of GaSb alloys and photodiodes grown by liquid‐phase epitaxy

1996 ◽  
Vol 80 (3) ◽  
pp. 1731-1734 ◽  
Author(s):  
Yuh‐Maoh Sun ◽  
Wen‐Jang Jiang ◽  
Meng‐Chyi Wu
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

scholarly journals Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy

2017 ◽  
Vol 794 ◽  
pp. 012013 ◽  
Author(s):  
V Donchev ◽  
I Asenova ◽  
M Milanova ◽  
D Alonso-Álvarez ◽  
K Kirilov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

Liquid phase epitaxy and magneto-optical properties at 1.152 µm and 1.064 µm of garnet films on GdGaG

1975 ◽  
Vol 11 (5) ◽  
pp. 1115-1117 ◽  
Author(s):  
J. Daval ◽  
B. Ferrand ◽  
J. Geynet ◽  
D. Challeton ◽  
J. Peuzin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Garnet Films

Near-field Scanning Optical Microscopy and Electron Microprobe Microscopy Investigations of Immiscibility Effects in Indium Gallium Phosphide Grown by Liquid Phase Epitaxy

2001 ◽  
Vol 667 ◽  
Author(s):  
C. A. Paulson ◽  
A. B. Ellis ◽  
T. F. Kuech
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Optical Microscopy ◽  
Liquid Phase Epitaxy ◽  
Gallium Phosphide ◽  
Near Field ◽  
Indium Gallium Phosphide ◽  
Indium Gallium ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

ABSTRACTWe have used Near-field Scanning Optical Microscopy (NSOM) and Electron Probe Microanalysis (EPMA) to study the topographic and microscopic optical properties of indium gallium phosphide (In1−xGaxP) samples grown by Liquid Phase Epitaxy (LPE) on gallium arsenide substrates. Photoluminescence (PL) intensity images gathered using NSOM exhibit strong, highly localized variations in the optical properties of these samples that are seen to occur roughly in registry with the surface topography. Shifts in the PL peak position (by 27 meV) occur across highly mismatched samples with high In content, whereas no shifts were seen for In1−xGaxP films with a nearly lattice matched composition. Compositional fluctuations lead to these PL peak energy shifts, measured by NSOM with a resolution of 250 nm. These composition fluctuations arise from the known solid-solid miscibility gap in the In1−xGaxP system at temperatures used for the growth of these samples.

Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid‐phase epitaxy

1995 ◽  
Vol 77 (2) ◽  
pp. 512-516 ◽  
Author(s):  
Ho Ki Kwon ◽  
S. D. Kwon ◽  
In Kim ◽  
Jong Boong Lee ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Electrical And Optical Properties ◽  
Effect Of Oxygen
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