Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid‐phase epitaxy

1995 ◽  
Vol 77 (2) ◽  
pp. 512-516 ◽  
Author(s):  
Ho Ki Kwon ◽  
S. D. Kwon ◽  
In Kim ◽  
Jong Boong Lee ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Electrical And Optical Properties ◽  
Effect Of Oxygen

Structural, electrical, and optical properties of InAs[sub x]Sb[sub 1−x] epitaxial films grown by liquid-phase epitaxy

2008 ◽  
Vol 104 (7) ◽  
pp. 073712 ◽  
Author(s):  
Fubao Gao ◽  
NuoFu Chen ◽  
X. W. Zhang ◽  
Yu Wang ◽  
Lei Liu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Films ◽  
Electrical And Optical Properties

Optical properties of GaSb alloys and photodiodes grown by liquid‐phase epitaxy

1996 ◽  
Vol 80 (3) ◽  
pp. 1731-1734 ◽  
Author(s):  
Yuh‐Maoh Sun ◽  
Wen‐Jang Jiang ◽  
Meng‐Chyi Wu
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

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