Application of room-temperature CMOS process for low-temperature infrared readout circuit design

1994 ◽  
Author(s):  
Wei-Lee Lu ◽  
Chin-Hsin Kao ◽  
L. S. Lu ◽  
Far-Wen Jih ◽  
Tai Ping Sun ◽  
...  
Keyword(s):  
Low Temperature ◽  
Circuit Design ◽  
Room Temperature ◽  
Cmos Process ◽  
Readout Circuit

Survival of mouse blastocysts after low-temperature preservation under high pressure

2004 ◽  
Vol 52 (4) ◽  
pp. 479-487 ◽  
Author(s):  
Cs. Pribenszky ◽  
M. Molnár ◽  
S. Cseh ◽  
L. Solti
Keyword(s):  
Phase Transition ◽  
Hydrostatic Pressure ◽  
Low Temperature ◽  
High Hydrostatic Pressure ◽  
Room Temperature ◽  
Freezing Point ◽  
Significant Loss ◽  
Embryo Cryopreservation ◽  
Subzero Temperatures ◽  
Survival Capacity

Cryoinjuries are almost inevitable during the freezing of embryos. The present study examines the possibility of using high hydrostatic pressure to reduce substantially the freezing point of the embryo-holding solution, in order to preserve embryos at subzero temperatures, thus avoiding all the disadvantages of freezing. The pressure of 210 MPa lowers the phase transition temperature of water to -21°C. According to the results of this study, embryos can survive in high hydrostatic pressure environment at room temperature; the time embryos spend under pressure without significant loss in their survival could be lengthened by gradual decompression. Pressurisation at 0°C significantly reduced the survival capacity of the embryos; gradual decompression had no beneficial effect on survival at that stage. Based on the findings, the use of the phenomena is not applicable in this form, since pressure and low temperature together proved to be lethal to the embryos in these experiments. The application of hydrostatic pressure in embryo cryopreservation requires more detailed research, although the experience gained in this study can be applied usefully in different circumstances.

scholarly journals A 2.1 GHz, 210 μW, —189 dBc/Hz DCO with Ultra Low Power DCC Scheme

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 805
Author(s):  
Shi Zuo ◽  
Jianzhong Zhao ◽  
Yumei Zhou
Keyword(s):  
Low Power ◽  
Current Efficiency ◽  
Phase Noise ◽  
Duty Cycle ◽  
Semiconductor Manufacturing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Cmos Process ◽  
Ultra Low Power ◽  
Measured Phase

This article presents a low power digital controlled oscillator (DCO) with an ultra low power duty cycle correction (DCC) scheme. The DCO with the complementary cross-coupled topology uses the controllable tail resistor to improve the tail current efficiency. A robust duty cycle correction (DCC) scheme is introduced to replace self-biased inverters to save power further. The proposed DCO is implemented in a Semiconductor Manufacturing International Corporation (SMIC) 40 nm CMOS process. The measured phase noise at room temperature is −115 dBc/Hz at 1 MHz offset with a dissipation of 210 μμW at an oscillating frequency of 2.12 GHz, and the resulin figure-of-merit is s −189 dBc/Hz.

Photophysical properties of N719 and Z907 dyes, benchmark sensitizers for dye-sensitized solar cells, at room and low temperature

2021 ◽  
Vol 23 (10) ◽  
pp. 6182-6189
Author(s):  
Dariusz M. Niedzwiedzki
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Optical Spectroscopy ◽  
Room Temperature ◽  
Photophysical Properties ◽  
Dye Sensitized Solar Cells ◽  
Time Resolved ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Photophysical properties of N719 and Z907, benchmark Ru-dyes used as sensitizers in dye-sensitized solar cells, were studied by static and time-resolved optical spectroscopy at room temperature and 160 K.

Transition Insulator-Metal and Antiferromagnetic-Paramagnetic Cu Doped in La0.47Ca0.53MnO3

2015 ◽  
Vol 1123 ◽  
pp. 73-77 ◽  
Author(s):  
Yohanes Edi Gunanto ◽  
K. Sinaga ◽  
B. Kurniawan ◽  
S. Poertadji ◽  
H. Tanaka ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Magnetic Structure ◽  
Room Temperature ◽  
Paramagnetic Phase ◽  
Perovskite Manganites ◽  
Antiferromagnetic Phase ◽  
Temperature Transition ◽  
Cu Doping ◽  
Metal State

The study of the perovskite manganites La0.47Ca0.53Mn1-xCuxO3 with x = 0, 0.06, 0.09, and 0.13 has been done. The magnetic structure was determined using high-resolution neutron scattering at room temperature and low temperature. All samples were paramagnetic at room temperature and antiferromagnetic at low temperature. Using the SQUID Quantum Design, the samples showed that the doping of the insulating antiferromagnetic phase La0.47Ca0.53MnO3 with Cu doping resulted in the temperature transition from an insulator to metal state, and an antiferromagnetic to paramagnetic phase. The temperature transition from an insulator to metal state ranged from 23 to 100 K and from 200 to 230 K for the transition from an antiferromagnetic to paramagnetic phase.

RECENT DEVELOPMENTS ON 3D INTEGRATION OF METALLIC SET ONTO CMOS PROCESS FOR MEMORY APPLICATION

2012 ◽  
Vol 11 (04) ◽  
pp. 1240024 ◽  
Author(s):  
N. JOUVET ◽  
M. A. BOUNOUAR ◽  
S. ECOFFEY ◽  
C. NAUENHEIM ◽  
A. BEAUMONT ◽  
...  
Keyword(s):  
Room Temperature ◽  
Memory Cell ◽  
Atomic Layer ◽  
Cmos Process ◽  
3D Integration ◽  
Simulation Tools ◽  
Layer Deposition ◽  
Recent Developments ◽  
Sram Memory ◽  
Electrical Characterizations

This work presents a nanodamascene process for a CMOS back-end-of-line fabrication of metallic single electron transistor(SET), together with the use of simulation tools for the development of a SET SRAM memory cell. We show room temperature electrical characterizations of SETs fabricated on CMOS with relaxed dimensions, and simulations of a SET SRAM memory cell. Using their physical characteristics achievable through the use of atomic layer deposition, it will be demonstrated that it has the potential to operate at temperature up to 398 K, and that power consumption is less than that of equivalent circuit in advanced CMOS technologies. In order to take advantage of both low power SETs and high CMOS drive efficiency, a hybrid 3D SET CMOS circuit is proposed.

Molecule-Based Magnets—An Overview

MRS Bulletin ◽  
2000 ◽  
Vol 25 (11) ◽  
pp. 21-30 ◽  
Author(s):  
Joel S. Miller ◽  
Arthur J. Epstein
Keyword(s):  
Low Temperature ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Magnetic Ordering ◽  
Low Density ◽  
Materials Properties ◽  
The Common ◽  
New Processing ◽  
Very High

Molecule-based magnets are a broad, emerging class of magnetic materials that expand the materials properties typically associated with magnets to include low density, transparency, electrical insulation, and low-temperature fabrication, as well as combine magnetic ordering with other properties such as photoresponsiveness. Essentially all of the common magnetic phenomena associated with conventional transition-metal and rare-earth-based magnets can be found in molecule-based magnets. Although discovered less than two decades ago, magnets with ordering temperatures exceeding room temperature, very high (∼27.0 kOe or 2.16 MA/m) and very low (several Oe or less) coercivities, and substantial remanent and saturation magnetizations have been achieved. In addition, exotic phenomena including photoresponsiveness have been reported. The advent of molecule-based magnets offers new processing opportunities. For example, thin-film magnets can be prepared by means of low-temperature chemical vapor deposition and electrodeposition methods.

Sign in / Sign up

Export Citation Format

Share Document