Bulk laser damage of large-size KDP crystals obtained at various crystal growth conditions

1994 ◽  
Author(s):  
Marina I. Kolybayeva ◽  
Igor M. Pritula ◽  
Viacheslav M. Puzikov ◽  
Vitaly I. Salo ◽  
Serge V. Garnov ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Conditions ◽  
Laser Damage ◽  
Large Size ◽  
Kdp Crystals

scholarly journals Numerical Analysis of Difficulties of Growing Large-Size Bulk β-Ga2O3 Single Crystals with the Czochralski Method

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 25
Author(s):  
Xia Tang ◽  
Botao Liu ◽  
Yue Yu ◽  
Sheng Liu ◽  
Bing Gao
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Czochralski Method ◽  
Liquid Interface ◽  
Spiral Growth ◽  
Growth Time ◽  
Large Size ◽  
Crystal Diameter ◽  
Solid Liquid Interface ◽  
Solid Liquid

The difficulties in growing large-size bulk β-Ga2O3 single crystals with the Czochralski method were numerically analyzed. The flow and temperature fields for crystals that were four and six inches in diameter were studied. When the crystal diameter is large and the crucible space becomes small, the flow field near the crystal edge becomes poorly controlled, which results in an unreasonable temperature field, which makes the interface velocity very sensitive to the phase boundary shape. The effect of seed rotation with increasing crystal diameter was also studied. With the increase in crystal diameter, the effect of seed rotation causes more uneven temperature distribution. The difficulty of growing large-size bulk β-Ga2O3 single crystals with the Czochralski method is caused by spiral growth. By using dynamic mesh technology to update the crystal growth interface, the calculation results show that the solid–liquid interface of the four-inch crystal is slightly convex and the center is slightly concave. With the increase of crystal growth time, the symmetry of cylindrical crystal will be broken, which will lead to spiral growth. The numerical results of the six-inch crystal show that the whole solid–liquid interface is concave and unstable, which is not conducive to crystal growth.

Néel temperature of zinc-blende, MBE-grown MnTe layers: modification by the crystal growth conditions

2004 ◽  
Vol 1 (4) ◽  
pp. 953-956 ◽  
Author(s):  
W. Szuszkiewicz ◽  
E. Dynowska ◽  
J. Z. Domagala ◽  
E. Janik ◽  
E. Łusakowska ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Growth Conditions ◽  
Neel Temperature ◽  
Néel Temperature ◽  
Zinc Blende

scholarly journals Performance of rapid-grown KDP crystals with continuous filtration

2015 ◽  
Vol 3 ◽  
Author(s):  
Guohang Hu ◽  
Yueliang Wang ◽  
Junxiu Chang ◽  
Xiaoyi Xie ◽  
Yuanan Zhao ◽  
...  
Keyword(s):  
Near Infrared ◽  
Laser Damage ◽  
Damage Resistance ◽  
Damage Initiation ◽  
Micron Size ◽  
Continuous Filtration ◽  
Laser Induced Damage ◽  
Almost All ◽  
Lower Correlation ◽  
Kdp Crystals

Rapid growth processing of KDP crystals was improved by employing continuous filtration to eliminate bulk defects. The performances of the KDP crystals, including scattering defects, laser damage resistance and transmittance, were measured and analyzed. Compared with rapid-grown KDP without continuous filtration, the transmittance in the near-infrared was increased by at least 2%, almost all of ‘micron size’ defects were eliminated and ‘sub-micron size’ defects were decreased by approximately 90%. Laser damage testing revealed that the laser-induced damage thresholds (LIDTs), as well as the consistency of the LIDTs from sample to sample, were improved greatly. Moreover, it identified that ‘micron size’ defects were the precursors which initiated laser damage at relative lower laser fluence (4–6 J cm−2), and there was a lower correlation between smaller size scattering defects and laser damage initiation. The improved consistency in the LIDTs, attributed to elimination of ‘micron size’ defects, and LIDT enhancement originated from the decreased absorption of the KDP crystals.

Optimization of Bulk Hgcdte Growth in a Directional Solidification Furnace by Numerical Simulation

1995 ◽  
Vol 398 ◽  
Author(s):  
A.V. Bune ◽  
D.C. Gillies ◽  
S.L. Lehoczky
Keyword(s):  
Heat Transfer ◽  
Numerical Simulation ◽  
Finite Element ◽  
Crystal Growth ◽  
Numerical Model ◽  
Directional Solidification ◽  
Growth Conditions ◽  
Finite Element Code ◽  
Interface Shape ◽  
Solidification Furnace

ABSTRACTA numerical model of heat transfer by combined conduction, radiation and convection was developed using the FIDAP finite element code for NASA's Advanced Automated Directional Solidification Furnace (AADSF). The prediction of the temperature gradient in an ampoule with HgCdTe is a necessity for the evaluation of whether or not the temperature set points for furnace heaters and the details of cartridge design ensure optimal crystal growth conditions for this material and size of crystal. A prediction of crystal/melt interface shape and the flow patterns in HgCdTe are available using a separate complementary model.

Crystal growth and application of large size YCOB crystal for high power laser

2014 ◽  
Vol 36 (12) ◽  
pp. 2000-2003 ◽  
Author(s):  
Anhua Wu ◽  
Jun Xu ◽  
Yanqing Zheng ◽  
Xiaoyan Liang
Keyword(s):  
Crystal Growth ◽  
High Power ◽  
High Power Laser ◽  
Power Laser ◽  
Large Size

scholarly journals Macrodefects in Cubic Silicon Carbide Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 375-378 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Justinas Palisaitis ◽  
Remigijus Vasiliauskas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Temperature Gradient ◽  
Early Stage ◽  
Growth Conditions ◽  
Temperature Ramp ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

Large-size TlBr single crystal growth and defect study

2018 ◽  
Vol 487 ◽  
pp. 8-11 ◽  
Author(s):  
Mingzhi Zhang ◽  
Zhiping Zheng ◽  
Zheng Chen ◽  
Sen Zhang ◽  
Wei Luo ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Large Size
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