Spatially resolved electron-beam induced current transient spectroscopy for deep-center characterization of diamond

1994 ◽  
Author(s):  
Karl H. Schoenbach ◽  
T. Tessnow ◽  
Ravindra P. Joshi ◽  
Randy A. Roush ◽  
Ralf P. Brinkmann
Keyword(s):  
Electron Beam ◽  
Deep Center ◽  
Current Transient ◽  
Induced Current ◽  
Spatially Resolved ◽  
Electron Beam Induced Current ◽  
Transient Spectroscopy

Characterization of 4H-SiC pn Structures with Unstable Excess Current

2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Induced Current ◽  
Excess Current ◽  
Forward Current ◽  
Electron Beam Induced Current

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.

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