Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview

1994 ◽  
Author(s):  
G. W. Yoon ◽  
Jin-ha Kim ◽  
Unnikrishnan Sreenath ◽  
Dim-Lee Kwong
Keyword(s):  
Material Processing ◽  
Device Fabrication ◽  
Recent Developments

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

Graphene Oxide and Its Derivatives: Their Synthesis and Use in Organic Synthesis

2019 ◽  
Vol 23 (2) ◽  
pp. 188-204 ◽  
Author(s):  
Xiangjun Peng ◽  
Xianyun Xu ◽  
Fujiang Huang ◽  
Qian Liu ◽  
Liangxian Liu
Keyword(s):  
Graphene Oxide ◽  
Carbon Materials ◽  
Device Fabrication ◽  
Organic Reactions ◽  
Bond Forming ◽  
Bond Forming Reactions ◽  
Modern Physics ◽  
Recent Developments ◽  
Optical And Mechanical Properties ◽  
Nitrogen Double Bond

Since Geim and co-workers reported their groundbreaking experiments on graphene, research on graphene oxide (GO) and its derivatives has greatly influenced the field of modern physics, chemistry, device fabrication, material science, and nanotechnology. The unique structure and fascinating properties of these carbon materials can be ascribed to their eminent chemical, electronic, electrochemical, optical, and mechanical properties of GO and its derivatives, particularly compared to other carbon allotropes. The present Review aims to provide an overview on the recent developments in the preparation of GO and its derivatives and their applications in organic reactions. We will first outline the synthesis of GO and its derivatives. Then, we will discuss the major sections about their application as stoichiometric and catalytic oxidants in organic reactions, a particular emphasis on the carbon-carbon, carbon-oxygen, and carbon-nitrogen single bond-forming reactions, as well as carbon-oxygen and carbon-nitrogen double bond-forming reactions. Simultaneously, this Review also describes briefly transition metal supported on GO or its derivatives as a catalyst for organic reaction. Lastly, we will present an outlook of potential areas where GO and its derivatives may be expected to find utility or opportunity for further growth and study.

Fabrication of Si-Gate CMOS Devices In A Heteroepitaxial Si/Caf2/Si Structure

1987 ◽  
Vol 91 ◽  
Author(s):  
Hiroshi Onoda ◽  
Masayoshi Sasaki ◽  
Teruo Katoh ◽  
Norio Hirashita
Keyword(s):  
High Speed ◽  
Solid Phase ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Cmos Inverter ◽  
Ion Channeling ◽  
Propagation Delays ◽  
Segregation Effect ◽  
Recent Developments ◽  
Si Films

ABSTRACTThe results of recent developments on device fabrication in a heteroepitaxial Si/CaF2/Si structure have been presented and discussed. A high quality heteroepitaxial Si/CaF2/Si structure has been obtained by successive molecular beam epitaxy of CaF2 and Si. The epitaxial Si film on CaF2/Si structure has an ion channeling minimum yield of 7 %. It was found, however, that Ca and F segregated at the surface of epitaxial Si films. A possibility of reducing the segregation effect by the use of solid phase epitaxy of Si has been proposed.Si-gate CMOS devices have been successfully fabricated in a Si/CaF2/Si structure with alt improved CMOS proress. The maximum effective mobiliiies are about 570 cm2/V.sec and 240 cm2/V.sec for n-channel and p-channel transistors, respectively. Propagation delays below 360 ps have been obtained for CMOS inverter chains with Leff = 2 μm. These results indicate that the Si/CaF2/Si structure has potential for the fabrication of high-speed silicon-on-insulator devices.

Nanofabrication Techniques: Challenges and Future Prospects

2021 ◽  
Vol 21 (10) ◽  
pp. 4981-5013
Author(s):  
Usama Tahir ◽  
Young Bo Shim ◽  
Muhammad Ahmad Kamran ◽  
Doo-In Kim ◽  
Myung Yung Jeong
Keyword(s):  
Large Scale ◽  
Low Cost ◽  
Device Fabrication ◽  
Future Directions ◽  
3 Dimensional ◽  
Nano Fabrication ◽  
Innovative Products ◽  
Recent Developments ◽  
Potential Applications ◽  
Photonic Energy

Nanofabrication of functional micro/nano-features is becoming increasingly relevant in various electronic, photonic, energy, and biological devices globally. The development of these devices with special characteristics originates from the integration of low-cost and high-quality micro/nano-features into 3D-designs. Great progress has been achieved in recent years for the fabrication of micro/nanostructured based devices by using different imprinting techniques. The key problems are designing techniques/approaches with adequate resolution and consistency with specific materials. By considering optical device fabrication on the large-scale as a context, we discussed the considerations involved in product fabrication processes compatibility, the feature’s functionality, and capability of bottom-up and top-down processes. This review summarizes the recent developments in these areas with an emphasis on established techniques for the micro/nano-fabrication of 3-dimensional structured devices on large-scale. Moreover, numerous potential applications and innovative products based on the large-scale are also demonstrated. Finally, prospects, challenges, and future directions for device fabrication are addressed precisely.

scholarly journals Recent developments in new laser systems used for material processing

1994 ◽  
Vol 04 (C4) ◽  
pp. C4-13-C4-23 ◽  
Author(s):  
E. BEYER ◽  
V. KRAUSE ◽  
P. LOOSEN
Keyword(s):  
Material Processing ◽  
Recent Developments ◽  
Laser Systems
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