Light emission from hot carriers in polar semiconductor devices

1993 ◽  
Author(s):  
Paolo Lugli ◽  
Aldo Di Carlo ◽  
Peter Vogl ◽  
G. Zandler
Keyword(s):  
Light Emission ◽  
Semiconductor Devices ◽  
Hot Carriers

Light emission from hot carriers in Si MOSFETS

1992 ◽  
Vol 7 (3B) ◽  
pp. B567-B569 ◽  
Author(s):  
K Hublitz ◽  
S A Lyon
Keyword(s):  
Light Emission ◽  
Hot Carriers

Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers

1990 ◽  
Vol 11 (11) ◽  
pp. 487-489 ◽  
Author(s):  
E. Zanoni ◽  
S. Bigliardi ◽  
R. Capelletti ◽  
P. Lugli ◽  
F. Magistrali ◽  
...  
Keyword(s):  
Light Emission ◽  
Hot Carriers

Renilla Bioluminescence: A Morphologic Approach to the Location of Photocytes

1974 ◽  
Vol 32 ◽  
pp. 208-209
Author(s):  
Ben O. Spurlock ◽  
Milton J. Cormier
Keyword(s):  
Excited State ◽  
Ground State ◽  
Molecular Basis ◽  
Light Emission ◽  
Chemical Basis ◽  
Electronic Excited State ◽  
Colonial Form ◽  
The Common ◽  
Eighteenth And Nineteenth Centuries ◽  
Catalyzed Oxidation

The phenomenon of bioluminescence has fascinated layman and scientist alike for many centuries. During the eighteenth and nineteenth centuries a number of observations were reported on the physiology of bioluminescence in Renilla, the common sea pansy. More recently biochemists have directed their attention to the molecular basis of luminosity in this colonial form. These studies have centered primarily on defining the chemical basis for bioluminescence and its control. It is now established that bioluminescence in Renilla arises due to the luciferase-catalyzed oxidation of luciferin. This results in the creation of a product (oxyluciferin) in an electronic excited state. The transition of oxyluciferin from its excited state to the ground state leads to light emission.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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