Generation of hot carriers by secondary impact ionization in deep submicron devices: model and light emission characterization

2002 ◽  
Author(s):  
B. Marchand ◽  
D. Blachier ◽  
C. Leroux ◽  
G. Ghibaudo ◽  
F. Balestra ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Light Emission ◽  
Deep Submicron ◽  
Hot Carriers ◽  
Secondary Impact ◽  
Submicron Devices

Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

2002 ◽  
Vol 46 (3) ◽  
pp. 337-342 ◽  
Author(s):  
B. Marchand ◽  
B. Cretu ◽  
G. Ghibaudo ◽  
F. Balestra ◽  
D. Blachier ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Deep Submicron ◽  
Secondary Impact ◽  
Mos Devices ◽  
Device Aging

MODELING AND SIMULATION OF NONLINEAR ELECTRON-HOLE PLASMA IN DEEP SUBMICRON N-MOSFET DEVICES

1999 ◽  
Vol 08 (02) ◽  
pp. 289-304
Author(s):  
K. RAJENDRAN ◽  
S. SAMUDRA GANESH
Keyword(s):  
Impact Ionization ◽  
Chaotic Behavior ◽  
Collision Frequency ◽  
Deep Submicron ◽  
Chaotic Regime ◽  
Electron Hole ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Submicron Devices ◽  
Non Equilibrium

Computer simulations were done extensively in order to study nonlinear dynamics of laser and non-equilibrium electron-hole plasma interaction in deep submicron n-MOSFET silicon devices. We constructed the modified Duffing kind of nonlinear electron-hole plasma oscillator equation. Nonlinear characteristics of electron-hole plasma by impact ionization in submicron devices manifest a wide diversity of complex chaotic behavior. Collision frequency is found to be the dominant parameter to influence the bifurcation, chaos, hysteresis and bistable effects of electron-hole plasma at deep submicron devices. Small windows of higher period cascade above the critical value of laser parameter (α1α2) in the chaos region are observed. Non-equilibrium electron-hole plasma shows much chaotic regime at lower value of laser frequency (δ). Hysteresis and bistable region of electron-hole plasma are also presented and the conditions for their occurrence are identified. The unstable region completely merge at higher value of effective collision frequency (γ).

Light emission from hot carriers in polar semiconductor devices

1993 ◽  
Author(s):  
Paolo Lugli ◽  
Aldo Di Carlo ◽  
Peter Vogl ◽  
G. Zandler
Keyword(s):  
Light Emission ◽  
Semiconductor Devices ◽  
Hot Carriers

Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa)

1991 ◽  
Vol 70 (1) ◽  
pp. 529-531 ◽  
Author(s):  
Enrico Zanoni ◽  
Alessandro Paccagnella ◽  
Pietro Pisoni ◽  
Paolo Telaroli ◽  
Carlo Tedesco ◽  
...  
Keyword(s):  
Visible Light ◽  
Electron Mobility ◽  
Impact Ionization ◽  
Light Emission ◽  
High Electron ◽  
High Electron Mobility ◽  
Visible Light Emission

The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs

1978 ◽  
Vol 21 (1) ◽  
pp. 297-302 ◽  
Author(s):  
Thomas P. Pearsall ◽  
Federico Capasso ◽  
Robert E. Nahory ◽  
Martin A. Pollack ◽  
James R. Chelikowsky
Keyword(s):  
Band Structure ◽  
Impact Ionization ◽  
Hot Carriers ◽  
Structure Dependence

scholarly journals Impact ionization by hot carriers in a black phosphorus field effect transistor

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Faisal Ahmed ◽  
Young Duck Kim ◽  
Zheng Yang ◽  
Pan He ◽  
Euyheon Hwang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Impact Ionization ◽  
Black Phosphorus ◽  
Hot Carriers ◽  
Effect Transistor

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

2007 ◽  
Vol 556-557 ◽  
pp. 339-342 ◽  
Author(s):  
W.S. Loh ◽  
C. Mark Johnson ◽  
J.S. Ng ◽  
Peter M. Sandvik ◽  
Steve Arthur ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Submicron Devices ◽  
Illuminating Light ◽  
Factor Data ◽  
Ionization Coefficients ◽  
P Type ◽  
Dark Currents ◽  
The Impact

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.

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