High-refractive nonlinearity in heavily doped InP below the band edge

1993 ◽  
Author(s):  
Sergey A. Bystrimovich ◽  
Fedor V. Karpushko ◽  
Ilya A. Utkin
Keyword(s):  
2013 ◽  
Vol 140 (2-3) ◽  
pp. 610-615 ◽  
Author(s):  
Bhaskar Chandra Mohanty ◽  
Deuk Ho Yeon ◽  
Sachindra Nath Das ◽  
Ji Hye Kwak ◽  
Kyung Hoon Yoon ◽  
...  

1999 ◽  
Vol 33 (8) ◽  
pp. 830-835
Author(s):  
M. V. Karachevtseva ◽  
V. A. Strakhov ◽  
N. G. Yaremenko
Keyword(s):  

2015 ◽  
Vol 119 (44) ◽  
pp. 24958-24964 ◽  
Author(s):  
Si-Jing Ding ◽  
Fan Nan ◽  
Xiao-Na Liu ◽  
Xiao-Li Liu ◽  
Ya-Fang Zhang ◽  
...  

1984 ◽  
Vol 17 (2) ◽  
pp. 331-339 ◽  
Author(s):  
B G Arnaudov ◽  
D S Domanevskii ◽  
S K Evtimova ◽  
S V Zhohovetz ◽  
M V Prokopenja

Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.


1983 ◽  
Vol 44 (C3) ◽  
pp. C3-345-C3-348
Author(s):  
O. Bernard ◽  
M. Palpacuer ◽  
C. Benoit ◽  
M. Rolland ◽  
M. J.M. Abadie

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