Largely Enhanced Optical Nonlinear Response of Heavily Doped Ag:CdTe Nanocrystals around the Excitonic Band Edge

2015 ◽  
Vol 119 (44) ◽  
pp. 24958-24964 ◽  
Author(s):  
Si-Jing Ding ◽  
Fan Nan ◽  
Xiao-Na Liu ◽  
Xiao-Li Liu ◽  
Ya-Fang Zhang ◽  
...  
Keyword(s):  
Nonlinear Response ◽  
Band Edge ◽  
Excitonic Band ◽  
Heavily Doped

Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

2013 ◽  
Vol 140 (2-3) ◽  
pp. 610-615 ◽  
Author(s):  
Bhaskar Chandra Mohanty ◽  
Deuk Ho Yeon ◽  
Sachindra Nath Das ◽  
Ji Hye Kwak ◽  
Kyung Hoon Yoon ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Band Edge ◽  
Near Band Edge ◽  
Heavily Doped

EXCITONIC BAND-EDGE ELECTRO-ABSORPTION IN MULTIPLE-QUANTUM-WELL WAVEGUIDE MODULATOR STRUCTURES

1992 ◽  
Vol 01 (02) ◽  
pp. 339-365 ◽  
Author(s):  
N.E.J. HUNT ◽  
P.E. JESSOP
Keyword(s):  
Quantum Well ◽  
Electric Fields ◽  
Multiple Quantum Well ◽  
Band Edge ◽  
Multiple Quantum ◽  
Edge Absorption ◽  
Excitonic Band ◽  
Modulator Structure ◽  
Waveguide Modulator ◽  
Induced Changes

Electric field induced changes in the excitonic band-edge absorption spectra of Multiple-Quantum-Well (MQW) structures were investigated theoretically and experimentally. A comparison was made of three different exactly solvable methods for calculating quantum-well energies. The small effects due to conduction-band nonparabolicity and valence-band mixing were included. Transmission spectra were recorded for an In .12 Ga .88 As-GaAs optical waveguide modulator structure. The theoretical model was used to predict the changes in the long-wavelength tail of the band-edge absorption for different electric fields.

Band-edge photoluminescence of heavily doped InxGa1−x As1−y Py(λ=1.2 µm)

1999 ◽  
Vol 33 (8) ◽  
pp. 830-835
Author(s):  
M. V. Karachevtseva ◽  
V. A. Strakhov ◽  
N. G. Yaremenko
Keyword(s):  
Band Edge ◽  
Heavily Doped

Near-band-edge luminescence in heavily doped gallium arsenide

1984 ◽  
Vol 17 (2) ◽  
pp. 331-339 ◽  
Author(s):  
B G Arnaudov ◽  
D S Domanevskii ◽  
S K Evtimova ◽  
S V Zhohovetz ◽  
M V Prokopenja
Keyword(s):  
Gallium Arsenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Heavily Doped ◽  
Band Edge Luminescence

High-refractive nonlinearity in heavily doped InP below the band edge

1993 ◽  
Author(s):  
Sergey A. Bystrimovich ◽  
Fedor V. Karpushko ◽  
Ilya A. Utkin
Keyword(s):  
Band Edge ◽  
Heavily Doped

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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