Low-absorption measurements of optical thin films at 10.6 microns

1993 ◽  
Vol 32 (11) ◽  
pp. 2945
Author(s):  
Jean DiJon
1999 ◽  
Vol 598 ◽  
Author(s):  
Christoph J. Brabec ◽  
Christoph Winder ◽  
Markus C. Scharber ◽  
N. Serdar Sariciftci ◽  
Mats R. Andersson ◽  
...  

ABSTRACTRegioregular polythiophenes baring 3-(p-methoxyethoxyethoxy)-phenyl substituents (PEOPT) show high photoluminescence efficiencies. Exposing thin films of this polymer to vapors of chloroform or annealing them by heat treatment results in a red shift of the absorption maximum due to solvent or heat induced ordering which gives rise to more planar conformations. The fact, that annealed thin films of PEOPT exhibit absorption edges at relatively low energies and thus have an enhanced spectral range makes them suitable for use in photodiodes / solar cells. The photoinduced charge generation efficiency in PEOPT is significantly enhanced by the addition of a strong electron acceptor like fullerene, as observed by quenching of the luminescence and by photoinduced absorption measurements in the infrared and UV-Vis regime. The efficiency of the photoinduced charge transfer from PEOPT to a methanofullerene is found to depend on the ordering of PEOPT in thin films.


CrystEngComm ◽  
2016 ◽  
Vol 18 (1) ◽  
pp. 149-156 ◽  
Author(s):  
Sucheta Sengupta ◽  
Maayan Perez ◽  
Alexander Rabkin ◽  
Yuval Golan

We report the formation of size tunable PbS nanocubes induced by the presence of trisodium citrate during growth of PbS thin films by chemical bath deposition. The presence of citrate induces growth by the cluster mechanism which is monitored by XRD and HRSEM, along with real time light scattering and optical absorption measurements.


2001 ◽  
Vol 693 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
M. Pophristic ◽  
Ian T. Ferguson ◽  
B. D. Weaver

AbstractOptical absorption measurements were used to investigate deep defects in proton irradiated doped and undoped AlGaN thin films grown on sapphire substrates. Several samples were proton irradiated with energies ranging between 10 keV and 1 MeV. In certain samples, multiple-energy ion implantation was found necessary to produce a defect, which is responsible for the absorption band observed at 4.61 eV with a shoulder at around 4.10 eV in Al0.6Ga0.4N. Furnace thermal annealing of the irradiated samples show that this absorption band starts to anneal out at temperature as low as 200 oC. A combined isochronal and isothermal annealing in the temperature range of 200- 350°C shows that the activation energy (enthalpy associated with the migration process) of this defect is approximately 0.41 eV. This leads us to conclude that this absorption band is due to a N-vacancy related defect. It is observed that the peak position energy of the absorption band due to this defect is shifted depending on the Al mole fraction in good agreement with the theoretical predictions.


2012 ◽  
Vol 60 (2) ◽  
pp. 283-288 ◽  
Author(s):  
G. Mustafa ◽  
M.R.I. Chowdhury ◽  
D.K. Saha ◽  
S. Hussain ◽  
O. Islam

Chemically-deposited CdS thin films have been investigated using various techniques to discuss annealing effects on the structural, morphological, optical and electrical properties of the films. It has been observed from XRD that the deposited layers are mainly consisting of CdS phase. After annealing, metastable cubic phase was transformed into stable hexagonal phase. The average grain sizes were found to increase and the lattice constant, micro-strain and dislocation density were found to decrease after annealing. Optical absorption measurements show that band gap is observed to be 2.42 eV for as deposited and be 2.27 eV upon heat treatment at 673 K for one hour in air. The conductivity of this film has been determined by I-V measurement and observed to increase with increase of temperature. The activation energy of electrical conductivity of this film is also determined.DOI: http://dx.doi.org/10.3329/dujs.v60i2.11536 Dhaka Univ. J. Sci. 60(2): 283-288, 2012 (July)


2013 ◽  
Vol 678 ◽  
pp. 123-130 ◽  
Author(s):  
K. Kandaswamy ◽  
Panneerselvam Chirstopher Selvin ◽  
B. Nalini ◽  
I. Mohamed Abdulla ◽  
K.P. Abhilash

Thin films of Bi1.5(Sb2S3)0.5of different thickness were deposited on glass substrate by vacuum thermal evaporation method and annealed at different temperature. The elemental compositions of the films were confirmed by energy dispersive X-ray analysis (EDAX). The prepared films were structurally and morphologically characterized by X-ray diffraction (XRD) and microscopic (SEM & AFM) techniques respectively. It has been confirmed that the films possess polycrystalline nature with orthorhombic phase and the grain size of the films vary from 27.92 to 81.37 nm. The observed bandgap energies (varying from 1.787eV to 1.963 eV) of the films and its temperature dependence were estimated from optical absorption measurements.


1994 ◽  
Vol 358 ◽  
Author(s):  
Shu-Han Lin ◽  
Bernard J. Feldman

ABSTRACTTransparent and insulating thin films have been grown by the plasma decomposition of B2H6, NH3, and H2, at a substrate temperature of 250°C. From chemical composition, transmission electron microscopy, infrared absorption, and optical absorption measurements, the thin films are determined to be a mixed phase of crystalline cubic boron nitride and amorphous hydrogenated boron nitride. Also, the films have significantly more boron than nitrogen, a large concentration of hydrogen, a very large bandgap, strong infrared aborption due to both hexagonal boron nitride and boron icosahedra, and good adhesion to various substrates.


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