Rayleigh and predissociative fluorescence imaging of total and quantum state-specific densities from a combustion bomb using tunable excimer laser light

1993 ◽  
Author(s):  
Gyungsoo Kim ◽  
Hongjie An ◽  
Erhard W. Rothe ◽  
Lynne M. Hitchcock ◽  
Youngwei Gu ◽  
...  
Keyword(s):  
Fluorescence Imaging ◽  
Excimer Laser ◽  
Quantum State ◽  
Laser Light

Annealing effects of low pressure mercury and excimer laser light on degraded a-Si:H TFTs

1993 ◽  
Vol 164-166 ◽  
pp. 763-766 ◽  
Author(s):  
S.K. Lee ◽  
C.H. Oh ◽  
Y.S. Kim ◽  
J.S. Park ◽  
Y.I. Choi ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Light ◽  
Low Pressure ◽  
Annealing Effects

scholarly journals Delivery of F2-excimer laser light by aluminum hollow fibers

2000 ◽  
Vol 6 (13) ◽  
pp. 257 ◽  
Author(s):  
Yuji Matsuura ◽  
Takashi Yamamoto ◽  
Mitsunobu Miyagi
Keyword(s):  
Excimer Laser ◽  
Laser Light ◽  
Hollow Fibers

Laser Assisted Seeding for Electroless Plating on Insulators

1992 ◽  
Vol 285 ◽  
Author(s):  
A.G. Schrott ◽  
B. Braren ◽  
E.J.M. O'sullivan ◽  
R.F. Saraf
Keyword(s):  
Band Gap ◽  
Excimer Laser ◽  
Deposition Rate ◽  
Electroless Plating ◽  
Repetition Rate ◽  
Laser Light ◽  
Laser Pulses ◽  
Electron Excitation ◽  
Insulating Materials

ABSTRACTExcimer laser pulses with wavelengths of 248 and 308 nm were used to selectively seed Pd on SiO2 surfaces, making them suitable for electroless plating. This novel seeding process for insulating materials is accomplished with the sample immersed in the seeding solution, and occurs only on the areas of the substrate that are illuminated (through the liquid) by the laser light. The Pd content of the seeded samples increased with the number of pulses, but was rather independent of repetition rate. The deposition rate showed a dependence with wavelength consistent with a defect driven mechanism for electron excitation through the band gap of SiO2. These electrons then reduce the Pd ions in the solution in contact with the surface.

scholarly journals “Artificial” chirality induced in doped polymer by irradiation with circularly polarized excimer laser light

2015 ◽  
Vol 5 (12) ◽  
pp. 2761 ◽  
Author(s):  
Y. Kalachyova ◽  
O. Lyutakov ◽  
I. Goncharova ◽  
V. Svorcik
Keyword(s):  
Excimer Laser ◽  
Laser Light ◽  
Circularly Polarized ◽  
Doped Polymer

Photochemical Pattern Etching of Single-Crystalline 3C-SiC

1997 ◽  
Vol 495 ◽  
Author(s):  
T. Mori ◽  
K. Hatao ◽  
M. Murahara
Keyword(s):  
Excimer Laser ◽  
Surface Reaction ◽  
Laser Light ◽  
Sample Surface ◽  
Etch Depth ◽  
Reaction Cell ◽  
Single Crystalline ◽  
Excimer Lamp ◽  
Krf Laser ◽  
Krf Excimer Laser

ABSTRACTA single-crystalline 3C-SiC is very difficult to etch compared with a polycrystalline SiC. Thus, a photochemical pattern etching of the SiC was demonstrated by using Xe2* excimer lamp and ArF or KrF excimer laser. To promote the surface reaction, a Xe2* excimer lamp was employed to produce many radicals on the sample surface; simultaneously, ArF or KrF laser light irradiated the surface via a circuit pattern to dissociate the Si-C bonds. The Si and C reacted with the F and N radicals photo-dissociated from NF3 gas to form SiF4, CFn and CN, which diffused in the reaction cell. As a result, the single-crystalline 3C-SiC was photo-chemically etched effectively. With the NF3 gas of 200Torr, the Xe2* excimer lamp of 7mW/cm2, and the KrF excimer laser of 650mJ/cm2, 20Hz and 10,000shots, the etch depth of 700 Å was successfully achieved.

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