Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates

1992 ◽  
Author(s):  
Jean-Pierre Faurie ◽  
Sivalingam Sivananthan ◽  
Priyalal S. Wijewarnasuriya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Status ◽  
Cdznte Substrates

Influence of Surface Step Density on the Growth of Mercury Cadmium Telluride by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
T. Colin ◽  
D. Minsås ◽  
S. Gjøen ◽  
R. Sizmann ◽  
S. Løvold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Molecular Beam ◽  
Step Flow ◽  
Surface Steps ◽  
Step Density ◽  
Cdznte Substrates ◽  
Free Material ◽  
First Time

ABSTRACTWe report for the first time the results of structural and optical characterizations performed on Mercury Cadmium Telluride (MCT) grown simultaneously by Molecular Beam Epitaxy (MBE) on (11 1)B 4°misoriented and (211)B CdZnTe substrates. These two Te-terminated surfaces differ only by the density and the nature of their surface steps. In MBE conditions we do not observe any difference of incorporation between the two orientations at low growth temperatures and only a slight difference in Te and Hg incorporations above 200°C. This study confirms that the growth mode is essentially the same on both orientations and the growth proceeds by step-flow. The higher step density on (211) surfaces allows broader tolerances on the substrate temperature for the growth of twin-free material. It also leads to higher crystalline quality for the lowest temperatures. These observations have been confirmed by magneto-absorption experiments on superlattices grown simultaneously on both orientations.

In Situ Spectroscopic Ellipsometry for Monitoring and Control of HgCdTe Heterostructures Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 450 ◽  
Author(s):  
L. A. Almeida ◽  
M. J. Bevan ◽  
W. M. Duncan ◽  
H. D. Shih
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Status ◽  
Effusion Cell ◽  
Monitoring And Control ◽  
Automated Control ◽  
Point Change ◽  
Process Step ◽  
Set Point ◽  
Cdte Passivation

ABSTRACTA major advantage of vapor phase epitaxial growth techniques is their flexibility to produce Hg1−xCdxTe layers with difFerent compositions from one run to the next, as well as the flexibility to produce compositional heterostructures of Hg1−xCdxTe in one process step. To take full advantage of this flexibility, reliable, automated control must be introduced. To this end, a phase-modulated spectroscopie ellipsometer (SE) has been implemented for use as a contactless wafer state sensor. In this work SE was used to monitor in real-time the stoichiometry of epitaxial Hg1–4CdxTe during growth by molecular beam epitaxy (MBE). SE has provided valuable information about the MBE growth process, by revealing even small fluctuations in x (± 0.002). In particular, SE has measured the compositional profiles of both LWIR/MWIR and MWIR/LWIR interfaces. Distinct profiles were revealed for interfaces created by abrupt changes in the CdTe effusion cell set-point and for interfaces created by ramping the cell temperature linearly. Ramping results in a smoothly graded interface, whose thickness may be pre-determined, though typically 2000 Å. An abrupt set-point change results in a sharper transition (∼300 Å) followed by oscillations in composition associated with the settling time of the cell (∼1500 Å). The thickness of a CdTe passivation layer grown on a LWTR layer was determined. The current status of the SE will be reported through other illustrative examples which demonstrate its utility as a diagnostic tool and as a sensor for realtime, feed-back control of the MBE process.

Twin free growth of II–VI compounds on (111) CdZnTe substrates by molecular beam epitaxy

1989 ◽  
Vol 95 (1-4) ◽  
pp. 552-556 ◽  
Author(s):  
L. Di Cioccio ◽  
A. Million ◽  
J. Piaguet ◽  
G. Rolland ◽  
G. Lentz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Growth ◽  
Cdznte Substrates
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