Defects in HgTe grown by molecular beam epitaxy on (211)B-oriented CdZnTe substrates

2007 ◽  
Vol 25 (6) ◽  
pp. 1776 ◽  
Author(s):  
E. Selvig ◽  
C. R. Tonheim ◽  
K. O. Kongshaug ◽  
T. Skauli ◽  
T. Lorentzen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cdznte Substrates

Influence of Surface Step Density on the Growth of Mercury Cadmium Telluride by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
T. Colin ◽  
D. Minsås ◽  
S. Gjøen ◽  
R. Sizmann ◽  
S. Løvold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Molecular Beam ◽  
Step Flow ◽  
Surface Steps ◽  
Step Density ◽  
Cdznte Substrates ◽  
Free Material ◽  
First Time

ABSTRACTWe report for the first time the results of structural and optical characterizations performed on Mercury Cadmium Telluride (MCT) grown simultaneously by Molecular Beam Epitaxy (MBE) on (11 1)B 4°misoriented and (211)B CdZnTe substrates. These two Te-terminated surfaces differ only by the density and the nature of their surface steps. In MBE conditions we do not observe any difference of incorporation between the two orientations at low growth temperatures and only a slight difference in Te and Hg incorporations above 200°C. This study confirms that the growth mode is essentially the same on both orientations and the growth proceeds by step-flow. The higher step density on (211) surfaces allows broader tolerances on the substrate temperature for the growth of twin-free material. It also leads to higher crystalline quality for the lowest temperatures. These observations have been confirmed by magneto-absorption experiments on superlattices grown simultaneously on both orientations.

Twin free growth of II–VI compounds on (111) CdZnTe substrates by molecular beam epitaxy

1989 ◽  
Vol 95 (1-4) ◽  
pp. 552-556 ◽  
Author(s):  
L. Di Cioccio ◽  
A. Million ◽  
J. Piaguet ◽  
G. Rolland ◽  
G. Lentz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Growth ◽  
Cdznte Substrates

Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates

1992 ◽  
Author(s):  
Jean-Pierre Faurie ◽  
Sivalingam Sivananthan ◽  
Priyalal S. Wijewarnasuriya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Status ◽  
Cdznte Substrates

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

2005 ◽  
Vol 34 (6) ◽  
pp. 795-803 ◽  
Author(s):  
R. H. Sewell ◽  
C. A. Musca ◽  
J. M. Dell ◽  
L. Faraone ◽  
B. F. Usher ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cdznte Substrates

Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates

2009 ◽  
Vol 38 (8) ◽  
pp. 1764-1770 ◽  
Author(s):  
M. Reddy ◽  
J. M. Peterson ◽  
S. M. Johnson ◽  
T. Vang ◽  
J. A. Franklin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area ◽  
Cdznte Substrates

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

2017 ◽  
Vol 46 (9) ◽  
pp. 5374-5378 ◽  
Author(s):  
F. Erdem Arkun ◽  
Dennis D. Edwall ◽  
Jon Ellsworth ◽  
Sheri Douglas ◽  
Majid Zandian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area ◽  
Cdznte Substrates

Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates

2011 ◽  
Vol 40 (8) ◽  
pp. 1706-1716 ◽  
Author(s):  
M. Reddy ◽  
J. M. Peterson ◽  
T. Vang ◽  
J. A. Franklin ◽  
M. F. Vilela ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Large Area ◽  
Cdznte Substrates
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