Cavity-length dependence of quantum-well lasers with different strain

1992 ◽  
Author(s):  
Ulf Ohlander ◽  
Dana Karlsson-Varga ◽  
Bjoern Broberg ◽  
Johan Wallin ◽  
Gunnar Landgren
Keyword(s):  
Quantum Well ◽  
Cavity Length ◽  
Quantum Well Lasers ◽  
Length Dependence

Cavity length dependence of threshold current for quantum well lasers

1989 ◽  
Vol 54 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
C. Shieh ◽  
R. Engelmann ◽  
J. Mantz ◽  
K. Alavi ◽  
C. Shu
Keyword(s):  
Quantum Well ◽  
Cavity Length ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Length Dependence

Cavity length dependence of K-limited bandwidth in 1.6 μm compressive-strained quantum well lasers

1993 ◽  
Vol 29 (5) ◽  
pp. 449 ◽  
Author(s):  
T.C. Wu ◽  
S.C. Kan ◽  
D. Vassilovski ◽  
K.Y. Lau ◽  
C.E. Zah ◽  
...  
Keyword(s):  
Quantum Well ◽  
Cavity Length ◽  
Quantum Well Lasers ◽  
Limited Bandwidth ◽  
Length Dependence ◽  
Strained Quantum Well

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

Cavity length dependence of high-speed 1.55-μm multiple-quantum-well laser diode characteristics

1997 ◽  
Vol 9 (2) ◽  
pp. 164-166 ◽  
Author(s):  
Beom-hoan O ◽  
Heung Ro Choo ◽  
Hyung Mun Kim ◽  
Jeong Soo Kim ◽  
Dae Kon Oh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
High Speed ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Length Dependence ◽  
Multiple Quantum Well Laser

Length dependence of threshold current in multiple quantum well lasers

1988 ◽  
Vol 24 (19) ◽  
pp. 1218 ◽  
Author(s):  
J.Z. Wilcox ◽  
G.L. Peterson ◽  
S. Ou ◽  
J.J. Yang ◽  
M. Jansen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Length Dependence

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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