Fabrication of single-mode chalcogenide fiber probes for scanning near-field infrared optical microscopy

1999 ◽  
Vol 38 (8) ◽  
pp. 1381 ◽  
Author(s):  
D. T. Schaafsma
2005 ◽  
Vol 86 (20) ◽  
pp. 203109 ◽  
Author(s):  
P. G. Gucciardi ◽  
S. Patanè ◽  
A. Ambrosio ◽  
M. Allegrini ◽  
A. D. Downes ◽  
...  

1999 ◽  
Vol 75 (21) ◽  
pp. 3408-3410 ◽  
Author(s):  
P. G. Gucciardi ◽  
M. Colocci ◽  
M. Labardi ◽  
M. Allegrini

MRS Bulletin ◽  
1997 ◽  
Vol 22 (8) ◽  
pp. 27-30 ◽  
Author(s):  
J.W.P. Hsu

Near-field scanning optical microscopy (NSOM) provides a means to study optical and optoelectronic properties of materials at the nanometer scale. The key to achieving resolution higher than the diffraction limit is to place a subwavelength-sized light source—e.g., an aperture—within the near-field zone of the sample. In this case, the area of the sample illuminated is determined by the aperture size and not by the wavelength (see Figure 1). An image can then be formed by moving the sample and light source with respect to each other. While the principle of near-field optics is straightforward, its realization at visible-light wavelengths was not achieved until the invention of scanning-probe techniques in the 1980s. Since Betzig et al. demonstrated in 1991 that bright subwavelength apertures can be made by tapering and metal-coating single-mode optical fibers, research activities involving NSOM have increased tremendously. The later incorporation of shear-force feedback to regulate tip-sample separation adds another strength to NSOM. Using this distance regulation, a topographic image similar to that obtained by a conventional scanning force microscope is acquired simultaneously with the optical image. This provides a way to correlate structural and physical properties at the same sample positions and greatly simplifies interpretation of the NSOM data.


Scanning ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-9
Author(s):  
A. Smirnov ◽  
V. M. Yasinskii ◽  
D. S. Filimonenko ◽  
E. Rostova ◽  
G. Dietler ◽  
...  

In scanning near-field optical microscopy, the most popular probes are made of sharpened glass fiber attached to a quartz tuning fork (TF) and exploiting the shear force-based feedback. The use of tapping mode feedback could be preferable. Such an approach can be realized, for example, using bent fiber probes. Detailed analysis of fiber vibration modes shows that realization of truly tapping mode of the probe dithering requires an extreme caution. In case of using the second resonance mode, probes vibrate mostly in shear force mode unless the bending radius is rather small (ca. 0.3 mm) and the probe’s tip is short. Otherwise, the shear force character of the dithering persists. Probes having these characteristics were prepared by irradiation of a tapered etched glass fiber with a CW CO2 laser. These probes were attached to the TF in double resonance conditions which enables achieving significant quality factor (4000–6000) of the TF + probe system (Cherkun et al., 2006). We also show that, to achieve a truly tapping character, dithering, short, and not exceeding 3 mm lengths of a freestanding part of bent fiber probe beam should also be used in the case of nonresonant excitation.


2010 ◽  
Vol 110 (3) ◽  
pp. 211-215 ◽  
Author(s):  
H. Chibani ◽  
K. Dukenbayev ◽  
M. Mensi ◽  
S.K. Sekatskii ◽  
G. Dietler

1995 ◽  
Vol 406 ◽  
Author(s):  
B. B. Goldberg ◽  
H. F. Ghaemi ◽  
M. S. Ünlü ◽  
W. D. Herzog

AbstractNear field scanning optical microscopy (NSOM) is a recent technique where a tapered single-mode optical fiber probe is scanned over a sample surface at a height of a fraction of the wavelength. The tapered fiber provides a tiny aperture (a, ˜ 70nm) through which light is coupled and can yield resolutions as high as ˜, λ/40. We have used both room and low-temperature NSOM to study the local spectroscopic characteristics of a wide variety of material systems, from quantum dots and wires, to ordered GaInP, to heterojunctions and optoelectronic devices.Low temperature near-field photoluminescence spectroscopy was used to study spectral emission maps of a set of samples of GaInP epilayers with varying degrees of ordering. The samples exhibit two peaks, a low energy (LE) and a high energy (HE) peak. Our data are inconsistent with expectations that the LE peak is due to emission from domain boundaries and alternative models will be discussed. NSOM spectral maps can yield information about the spatial dependence of the local optical matrix elements. NSOM data on the emission mode structure of strained (In, Ga)As quantum well lasers has yielded new information on the source kinks in the light response at high currents, while local photocurrent spectroscopy using the tip as a point source of photons provides analysis of the semiconductor layer composition.


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