Effect of process parameters and packing density on development times for densely packed high-aspect-ratio SU-8 microstructures in x-ray lithography

2007 ◽  
Vol 6 (1) ◽  
pp. 013003 ◽  
Author(s):  
Bor-Yaun Shew
Keyword(s):  
Aspect Ratio ◽  
Process Parameters ◽  
Packing Density ◽  
High Aspect Ratio ◽  
X Ray ◽  
Development Times

SYNCHROTRON-RADIATION-SUPPORTED HIGH-ASPECT-RATIO NANOFABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 79-88
Author(s):  
A. CHEN ◽  
G. LIU ◽  
L. K. JIAN ◽  
HERBERT O. MOSER
Keyword(s):  
Synchrotron Radiation ◽  
Aspect Ratio ◽  
Light Source ◽  
Process Parameters ◽  
High Aspect Ratio ◽  
Radiation Spectrum ◽  
Nanometer Scale ◽  
X Ray ◽  
Preliminary Results ◽  
Synchrotron Light

X-ray lithography with synchrotron radiation is an important nanolithographic tool which has unique advantages in the production of high aspect ratio nanostructures. The optimum synchrotron radiation spectrum for nanometer scale X-ray lithography is normally in the range of 500 eV to 2 keV. In this paper, we present the main methods, equipment, process parameters and preliminary results of nanofabrication by proximity X-ray lithography within the nanomanufacturing program pursued by Singapore Synchrotron Light Source (SSLS). Nanostructures with feature sizes down to 200 nm and an aspect ratio up to 10 have been successfully achieved by this approach.

Fabrication of high aspect ratio nanoscale periodic structures by the soft X-ray interference lithography

2017 ◽  
Vol 170 ◽  
pp. 49-53 ◽  
Author(s):  
Jun Zhao ◽  
Yanqing Wu ◽  
Chaofan Xue ◽  
Shumin Yang ◽  
Liansheng Wang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Periodic Structures ◽  
Interference Lithography ◽  
X Ray

Formation of GaN Self-Organized Nanotips by Nanomasking Effect

2001 ◽  
Vol 707 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Aspect Ratio ◽  
Formation Mechanism ◽  
High Aspect Ratio ◽  
Photoelectron Spectroscopy ◽  
Nanometer Scale ◽  
Xps Analysis ◽  
X Ray ◽  
Self Organized

ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.

scholarly journals Progress in the fabrication of high-aspect-ratio zone plates by soft x-ray lithography

2002 ◽  
Author(s):  
Ralu Divan ◽  
Derrick C. Mancini ◽  
Nicolai A. Moldovan ◽  
Barry P. Lai ◽  
Lahsen Assoufid ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
X Ray ◽  
Zone Plates
Sign in / Sign up

Export Citation Format

Share Document