Effects of surface roughness and contact pressure on wafer bonding strength using transmission laser bonding technique

2006 ◽  
Vol 5 (4) ◽  
pp. 043013 ◽  
Author(s):  
Ampere A. Tseng
Keyword(s):  
Surface Roughness ◽  
Contact Pressure ◽  
Wafer Bonding ◽  
Bonding Strength ◽  
Laser Bonding ◽  
Transmission Laser Bonding ◽  
Bonding Technique

Direct Writing of Spot and Line Bonds for Microsystem Packaging Using Transmission Laser Bonding Technique

2007 ◽  
Vol 22 (1) ◽  
pp. 71-80 ◽  
Author(s):  
Jong-Seung Park ◽  
Han Zhu ◽  
Zhilong Zhao ◽  
Ampere A. Tseng ◽  
T. P. Chen
Keyword(s):  
Direct Writing ◽  
Laser Bonding ◽  
Transmission Laser Bonding ◽  
Microsystem Packaging ◽  
Bonding Technique

Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2435-2438
Author(s):  
Satoshi Kodama ◽  
Tomofumi Furuta ◽  
Noriyuki Watanabe ◽  
Hiroshi Ito ◽  
Atsushi Kanda ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Variable Threshold ◽  
Heterostructure Field Effect Transistors ◽  
Bonding Technique

Introduction of high tensile strain into Ge-on-Insulator structures by oxidation and annealing at high temperature

2021 ◽  
Author(s):  
Xueyang Han ◽  
ChiaTsong Chen ◽  
Cheol-Min Lim ◽  
Kasidit Toprasertpong ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Surface Roughness ◽  
High Temperature ◽  
Wafer Bonding ◽  
Present Method ◽  
Thermal Process ◽  
Tensile Strain ◽  
Process Condition ◽  
Thermal Expansion Mismatch ◽  
Physical Origin ◽  
N2 Annealing

Abstract It is demonstrated in this work that a high temperature thermal process including oxidation and N2 annealing at 850 oC can provide tensile strain of ~0.58 % at maximum into Ge-on-Insulator (GOI) structures without any special patterning or external stressors. The different impacts of oxidation and annealing on tensile strain generation, surface roughness and crystal qualities in the GOI structures fabricated by Ge condensation and wafer bonding are systematically examined. Tensile strain of 0.47 % is achieved without severe thermal damages under the optimal thermal process condition, which indicates the high potential of the present method for improving the performance of GOI n-channel MOSFETs. The influence of thermal expansion mismatch between Ge and SiO2 are suggested as a possible physical origin of high amount of tensile strain into GOI structures.

The vacuum wafer bonding technique as an alternative method for the fabrication of metal/semiconductor heterostructures

2001 ◽  
Vol 227-228 ◽  
pp. 906-910 ◽  
Author(s):  
K. Dessein ◽  
P.S. Anil Kumar ◽  
S. Németh ◽  
L. Delaey ◽  
G. Borghs ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Semiconductor Heterostructures ◽  
Alternative Method ◽  
Bonding Technique
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