Photonic radio frequency mixer using metal-semiconductor-metal photodetectors

2001 ◽  
Vol 40 (7) ◽  
pp. 1234
Author(s):  
Bing Li
Keyword(s):  
Radio Frequency ◽  
Metal Semiconductor Metal ◽  
Frequency Mixer

Radio Frequency Mixer Based on Magnetic Skyrmion

2020 ◽  
Vol 14 (9) ◽  
pp. 2000249
Author(s):  
Chengkun Song ◽  
Yunxu Ma ◽  
Chendong Jin ◽  
Haiyan Xia ◽  
Jianing Wang ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Frequency Mixer

Effects of Substrates on Structural and Morphological Characteristics of Radio Frequency Sputtered ZnO Layers

2021 ◽  
Vol 19 (6) ◽  
pp. 90-97
Author(s):  
Omar Hamad Alzobaedy ◽  
Noor Najmuldeen ◽  
A.A. Salim ◽  
H. Bakhtiar
Keyword(s):  
Radio Frequency ◽  
Layer Thickness ◽  
Chemical Elements ◽  
Rf Sputtering ◽  
Morphological Characteristics ◽  
Zinc Oxide Nanostructures ◽  
High Quality ◽  
Glass Substrates ◽  
Metal Semiconductor Metal ◽  
Enhanced Surface

High quality Zinc Oxide nanostructures (ZONSs) with customized traits became demanding for diverse applications. Based on this fact, some ZONSs with varied layer thicknesses (100 to 400 nm) were deposited on three types of Si (plain, polished and etched) and borosilicate glass substrates using the radio frequency (RF) sputtering method. Asdeposited samples were characterized systematically using various techniques to determine the effects of the substrates on their structures and morphologies. The XRD analyses of the sample showed the formation of high quality nanocrystallites with varying sizes where the crystallinity was improved with the increase of layer thickness and change of substrates. The FESEM and AFM images exhibited the nucleation of dense nanocrystallites with some pores/voids with enhanced surface roughness. In addition, the EDX spectra displayed the presence of appropriate chemical elements in the ZONSs layers. Sample grown on the etched Si substrate at layer thickness of 300 nm was found to be optimum. The results for the etched Si were presented. It was demonstrated that by optimizing the RF sputtering parameters (power of 100 W, Argon flow of 10 sccm and pressure of 10-5 mb) the structural and morphological traits of the layered ZONSs can be tailored. The proposed ZONSs may be useful for various optoelectronic applications including the metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors fabrication.

scholarly journals Влияние электродов на параметры солнечно-слепых детекторов УФ излучения

2021 ◽  
Vol 55 (3) ◽  
pp. 264
Author(s):  
В.М. Калыгина ◽  
А.В. Цымбалов ◽  
А.В. Алмаев ◽  
Ю.С. Петрова
Keyword(s):  
Ultraviolet Radiation ◽  
Radio Frequency ◽  
Gallium Oxide ◽  
Oxide Films ◽  
Interelectrode Distance ◽  
Metal Structures ◽  
Photoelectric Characteristics ◽  
Sapphire Substrates ◽  
Radio Frequency Sputtering ◽  
Metal Semiconductor Metal

The influence of electrode topology on the electrical and photoelectric characteristics of metal/semiconductor/metal structures was investigated. Gallium oxide films were obtained by radio-frequency sputtering of a Ga2O3 target onto sapphire substrates with the (0001) orientation. Two types of electrodes were formed on the surface of the oxide films: two parallel electrodes with an interelectrode distance of 250 mkm and interdigitated ones. The distance between the "fingers" of the detectors of the second type was 50, 30, 10, and 5 mkm. Regardless of the type of contacts, the structures exhibit sensitivity to ultraviolet radiation with a wavelength of λ = 254 nm. Detectors of the second type with an interelectrode distance of 5 μm demonstrate the highest values of the photocurrent Iph = 3.8 mA and detectivity D * = 5.54⋅10^15 cmHz^0.5W^-1.

scholarly journals Narrowband, Visible-Blind UV-A Sensor Based on aMg0.52Zn0.48OFilm Deposited by Radio-Frequency Sputtering Using a ZnO-Mg Composite Target

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Yuki Kohama ◽  
Takuya Nagai ◽  
Mitsuru Inada ◽  
Tadashi Saitoh
Keyword(s):  
Radio Frequency ◽  
Bias Voltage ◽  
Quartz Substrate ◽  
Metal Structure ◽  
Ultraviolet Photodetector ◽  
Composite Target ◽  
Peak Response ◽  
Radio Frequency Sputtering ◽  
Metal Semiconductor Metal ◽  
Visible Blind

A narrowband, visible-blind ultraviolet photodetector (PD) for UV-A is fabricated using a Mg0.52Zn0.48O film that is formed on a quartz substrate by a radio-frequency sputtering technique using a ZnO-Mg composite target. The content of Mg in the film is controlled by varying the number of Mg chips on the ZnO plate. The fabricated PD has a metal-semiconductor-metal structure with interdigitated electrodes and exhibits a narrow 3 dB bandwidth of 26 nm with a peak response wavelength of 340 nm and a cut-off wavelength of 353 nm. Moreover, the peak responsivity of the PD increases linearly with the bias voltage up to 30 V, indicating that the device operates via a photoconductive gain mechanism.

Single-electron transistor as a radio-frequency mixer

2002 ◽  
Vol 81 (3) ◽  
pp. 532-534 ◽  
Author(s):  
R. Knobel ◽  
C. S. Yung ◽  
A. N. Cleland
Keyword(s):  
Radio Frequency ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Frequency Mixer

Radio frequency sputtered zinc oxide thin films with application to metal–semiconductor–metal photodetectors

2007 ◽  
Vol 515 (18) ◽  
pp. 7357-7363 ◽  
Author(s):  
Meiya Li ◽  
Nehal Chokshi ◽  
Robert L. DeLeon ◽  
Gary Tompa ◽  
Wayne A. Anderson
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Radio Frequency ◽  
Oxide Thin Films ◽  
Metal Semiconductor Metal
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