Betavoltaic cell based on Ni/β-Ga2O3 and 63Ni source

2022 ◽  
Vol 40 (1) ◽  
pp. 010401
Author(s):  
Eugene B. Yakimov ◽  
Alexander Y. Polyakov ◽  
Stephen J. Pearton
Keyword(s):  
Betavoltaic Cell

Design and optimization of GaN ‐based betavoltaic cell for enhanced output power density

2020 ◽  
Vol 45 (1) ◽  
pp. 799-806
Author(s):  
Young Jun Yoon ◽  
Jae Sang Lee ◽  
In Man Kang ◽  
Jung‐Hee Lee ◽  
Dong‐Seok Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Design And Optimization ◽  
Betavoltaic Cell

Development of Hydrogen Loading System and Characterization of Tritiated Metallic Films for Betavoltaic Batteries

2014 ◽  
Author(s):  
Thomas E. Adams ◽  
Shripad T. Revankar
Keyword(s):  
Precise Measurement ◽  
Extreme Temperature ◽  
Hydrogen Gas ◽  
Metallic Films ◽  
Testing Facility ◽  
Beta Source ◽  
Loading System ◽  
Betavoltaic Cell ◽  
Extended Power

Betavoltaic cells can provide extended power up to 10 or more years in extreme temperature environments, −55°C to 150°C. However there is limited study on the loading of tritium which is beta source for these cells. The present study examines the loading of the tritium using surrogate hydrogen gas in various films through experiments and simulations. A detailed review of the betavoltaic cell characteristics is first discussed and key challenges in this technology are identified. For the experimental work, a testing facility is designed for loading hydrogen in metallic films such as titanium, palladium and scandium which are good for storage of hydrogen or tritium. The facility is unique as it enables precise measurement of hydrogen loading in the films using pressure difference. Preliminary tests of loading on scandium films were carried out and some results are presented. In order to optimize the film thickness simulations were carried out using MC-SET code for beta flux emission. The results of the simulations for titanium and palladium film are presented.

Demonstration of a 4H SiC betavoltaic cell

2006 ◽  
Vol 88 (3) ◽  
pp. 033506 ◽  
Author(s):  
M. V. S. Chandrashekhar ◽  
Christopher I. Thomas ◽  
Hui Li ◽  
M. G. Spencer ◽  
Amit Lal
Keyword(s):  
Betavoltaic Cell

Review—Betavoltaic Cell: The Past, Present, and Future

2021 ◽  
Vol 10 (2) ◽  
pp. 027005
Author(s):  
Chunlin Zhou ◽  
Jinsong Zhang ◽  
Xu Wang ◽  
Yushu Yang ◽  
Pan Xu ◽  
...  
Keyword(s):  
The Past ◽  
Betavoltaic Cell

Derivation of Critical Parameters of Betavoltaics

2018 ◽  
Author(s):  
Darrell S. Cheu ◽  
Thomas E. Adams ◽  
Shripad T. Revankar
Keyword(s):  
Cell Performance ◽  
Critical Parameters ◽  
Absorption Coefficients ◽  
Doping Density ◽  
Shunt Resistance ◽  
Beta Particles ◽  
As Doping ◽  
Implicit Equations ◽  
Betavoltaic Cell ◽  
Nuclear Batteries

Betavoltaic cells are nuclear batteries ideal for low-power applications for extended periods of time without maintenance or replacement. Betavoltaics function similarly to photovoltaic (solar) cells where instead of using sunlight, beta particles are used to generate electron-hole pairs within a semiconductor p-n junction to generate current. Even though there have been multiple demonstrations, betavoltaic performance has not been extensively studied. To accurately predict betavoltaic performance, which is important for a device in operation without maintenance for elongated periods, all parameters are required to predict potential fluctuations in cell performance, such as doping densities and resistances for semiconductor variation and absorption coefficients for beta-generated current. However, not all parameters are easily measured, especially when the p-n junction is constantly under irradiation and cannot be separated from the source. Critical parameters were characterized experimentally with the betavoltaic cell by performing capacitance-voltage to determine doping densities and performing current-voltage characterization tests to determine resistances on multiple NanoTritium™ cells, while absorption coefficients were determined from MCNP6 simulations. Experiments indicated that series resistance Rs was 1 × 106 Ω, while shunt resistance Rsh was 2 × 108 Ω from I-V characterization, while doping density ND was determined to be 1 × 1017 cm−3 from C-V characterization. Absorption coefficient α was found to vary with semiconductor material and incoming beta energy and used in conjunction with critical parameters from experimentation to accurately model betavoltaic cell performance similar to experimental results. Both implicit equations and explicit estimations were compared to model betavoltaic cell performance.

Model and optimal design of 147Pm SiC-based betavoltaic cell

2018 ◽  
Vol 123 ◽  
pp. 60-70 ◽  
Author(s):  
Lin Zhang ◽  
Hong-Liang Cheng ◽  
Xiao-Chuan Hu ◽  
Xiao-Bo Xu
Keyword(s):  
Optimal Design ◽  
Betavoltaic Cell

Demonstration of a 4H SiC Betavoltaic Cell

2006 ◽  
Vol 527-529 ◽  
pp. 1351-1354 ◽  
Author(s):  
M.V.S. Chandrashekhar ◽  
Christopher I. Thomas ◽  
Hui Li ◽  
Michael G. Spencer ◽  
Amit Lal
Keyword(s):  
Current Density ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Type Model ◽  
Good Correspondence ◽  
Betavoltaic Cell

A betavoltaic cell in 4H SiC is demonstrated. An abrupt p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.95V and a short circuit current density of 8.8 nA/cm2 were measured in a single p-n junction. An efficiency of 3.7% was obtained. A simple photovoltaic type model was used to explain the results. Good correspondence with the model was obtained. Fill factor and backscattering effects were included. Efficiency was limited by edge recombination and poor fill factor.

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