Design and optimization of GaN ‐based betavoltaic cell for enhanced output power density

2020 ◽  
Vol 45 (1) ◽  
pp. 799-806
Author(s):  
Young Jun Yoon ◽  
Jae Sang Lee ◽  
In Man Kang ◽  
Jung‐Hee Lee ◽  
Dong‐Seok Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Design And Optimization ◽  
Betavoltaic Cell

scholarly journals Design and optimization of a power supply unit for low profile LCD/LED TVs

2017 ◽  
Vol 7 (2) ◽  
pp. 158-166
Author(s):  
Revna Acar Vural ◽  
İbrahim Demirel ◽  
Burcu Erkmen
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Supply ◽  
Electromagnetic Interference ◽  
Heat Emission ◽  
Critical Parameters ◽  
International Electrotechnical Commission ◽  
Design And Optimization ◽  
Low Profile ◽  
Higher Power

The ongoing demand for smaller and lighter power supplies is driving the motivation to increase power density while maintaining a robust design compatible with international harmonic standards. Transformer design is a major challenge for low profile and high power density TV power cards. In addition to these, for electromagnetic interference standard and for providing efficient thermal management for heat emission, it is required to minimize EMI noise. In this study, by taking these stated criteria into consideration, a TV power card has been designed, which has 220W output power and can be used in low profile televisions. Proposed power card will meet desired critical parameters such as surface area and output power of the referenced card which has 13.5mm height, the heat, and power consumption at standby mode. Moreover, it is designed with 10mm height limit without any engraving on PCB in a way that it will meet International Electrotechnical Commission (IEC) current harmonic standard to which TVs are subjected. Experimental results demonstrate that the proposed power supply with 10mm height has 34% higher power density with respect to its counterpart having 13.5 mm height.

scholarly journals Power Density Improvement of Piezoelectric Energy Harvesters via a Novel Hybridization Scheme with Electromagnetic Transduction

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 803
Author(s):  
Zhongjie Li ◽  
Chuanfu Xin ◽  
Yan Peng ◽  
Min Wang ◽  
Jun Luo ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Energy Harvester ◽  
Hybrid Energy ◽  
Energy Harvesters ◽  
Piezoelectric Patch ◽  
Piezoelectric Energy ◽  
Electromagnetic Transduction ◽  
Self Powered ◽  
Power Densities

A novel hybridization scheme is proposed with electromagnetic transduction to improve the power density of piezoelectric energy harvester (PEH) in this paper. Based on the basic cantilever piezoelectric energy harvester (BC-PEH) composed of a mass block, a piezoelectric patch, and a cantilever beam, we replaced the mass block by a magnet array and added a coil array to form the hybrid energy harvester. To enhance the output power of the electromagnetic energy harvester (EMEH), we utilized an alternating magnet array. Then, to compare the power density of the hybrid harvester and BC-PEH, the experiments of output power were conducted. According to the experimental results, the power densities of the hybrid harvester and BC-PEH are, respectively, 3.53 mW/cm3 and 5.14 μW/cm3 under the conditions of 18.6 Hz and 0.3 g. Therefore, the power density of the hybrid harvester is 686 times as high as that of the BC-PEH, which verified the power density improvement of PEH via a hybridization scheme with EMEH. Additionally, the hybrid harvester exhibits better performance for charging capacitors, such as charging a 2.2 mF capacitor to 8 V within 17 s. It is of great significance to further develop self-powered devices.

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

2011 ◽  
Vol 32 (12) ◽  
pp. 124003 ◽  
Author(s):  
Bo Liu ◽  
Zhihong Feng ◽  
Sen Zhang ◽  
Shaobo Dun ◽  
Jiayun Yin ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Sapphire Substrate ◽  
Gan Hemt

Thermoelectric module design to improve lifetime and output power density

2021 ◽  
Vol 18 ◽  
pp. 100391
Author(s):  
W. Sun ◽  
R. Sui ◽  
G. Yuan ◽  
H. Zheng ◽  
Z. Zeng ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Thermoelectric Module ◽  
Module Design

Relation between piezoelectric properties of ceramics and output power density of energy harvester

2013 ◽  
Vol 33 (7) ◽  
pp. 1343-1347 ◽  
Author(s):  
Chang-Hoi Choi ◽  
In-Tae Seo ◽  
Daniel Song ◽  
Min-Soo Jang ◽  
Bo-Yun Kim ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power ◽  
Energy Harvester ◽  
Piezoelectric Properties

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

2 W∕mm output power density at 1 GHz for diamond FETs

2005 ◽  
Vol 41 (22) ◽  
pp. 1249 ◽  
Author(s):  
M. Kasu ◽  
K. Ueda ◽  
H. Ye ◽  
Y. Yamauchi ◽  
S. Sasaki ◽  
...  
Keyword(s):  
Power Density ◽  
Output Power
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